Kinetics of Oxide Growth during Reoxidation of Lightly Nitrided Oxides

1992 ◽  
Vol 139 (9) ◽  
pp. L82-L83 ◽  
Author(s):  
A. Philipossian ◽  
D. B. Jackson
Keyword(s):  
Oxide Growth ◽  
Kinetics Of

scholarly journals Effect of the Noble Metals Addition on the Oxidation Behavior of Ni3Al

2018 ◽  
Vol 2018 ◽  
pp. 1-19 ◽  
Author(s):  
J. J. Ramos-Hernandez ◽  
J. Porcayo-Calderon ◽  
J. G. Gonzalez-Rodriguez ◽  
Jan Mayén ◽  
G. Lara-Rodriguez ◽  
...  
Keyword(s):  
Noble Metals ◽  
Oxidation Behavior ◽  
Surface Composition ◽  
Xrd Analysis ◽  
Intermetallic Alloy ◽  
Oxide Growth ◽  
X Ray ◽  
Crystallographic Planes ◽  
Kinetics Of ◽  
Duplex Oxide

This paper discusses the effect of the addition of noble metals on the microstructure, mechanism, and oxidation kinetics of the Ni3Al intermetallic alloy. Ni3Al was doped with 1% (atomic percent) of Au, Ag, Pd, and Pt. Oxidation behavior of the alloys was evaluated at 900, 1000, and 1100°C in O2 for 24 hours. XRD analysis showed that the addition of noble metals favored the oxide growth on preferential crystallographic planes. In addition, the preferential substitution of the noble metals in the Ni3Al structure modifies the surface composition by increasing the Al/Ni ratio. It was observed that most of the alloys showed a subparabolic behavior, and only the intermetallic base and the alloy doped with Ag show a parabolic behavior at 900°C. The developed oxides were analyzed both superficially and in cross section by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDXA). It was evident that only the intermetallic base showed the formation of a duplex oxide scale (Al2O3/NiO). The alloys doped with noble metals showed the oxide growth practically of pure Al2O3. This was due to a decrease in the diffusion of the Ni cations because of the presence of the noble metals in the crystalline structure.

Kinetics of initial oxide growth on Fe-Cr alloys and the role of vacancies in film breakdown

1975 ◽  
Vol 31 (2) ◽  
pp. 331-338 ◽  
Author(s):  
M. G. C. Cox ◽  
B. Mcenaney ◽  
V. D. Scott
Keyword(s):  
Oxide Growth ◽  
Film Breakdown ◽  
Kinetics Of

In-Situ Processing of Silicon Dielectrics by Rapid Thermal Processing: Cleaning, Growth, and Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
J. Nulman
Keyword(s):  
Thermal Processing ◽  
Silicon Surface ◽  
Rapid Thermal Processing ◽  
Oxide Growth ◽  
Surface Chemical ◽  
Native Oxides ◽  
Wafer Cleaning ◽  
In Situ Processing ◽  
Kinetics Of

ABSTRACTThe in-situ processing of silicon dielectrics by rapid thermal processing (RTP) is described. RTP includes here three basic sequentially performed processes: wafer cleaning, oxidation and annealing. The insitu cleaning allows for reduction of chemical and native oxides and silicon surface chemical polish, resulting in interface density of states as low as 5×l09 cm-2eV-1. Kinetics of oxide growth indicates an activation energy of 1.4 eV for the initial linear oxidation rate.

Observation of Reduced Oxidation Rates for Plasmaassisted CVD Copper Films

1993 ◽  
Vol 309 ◽  
Author(s):  
P. J. Ding ◽  
B. Zheng ◽  
E. T. Eisenbraun ◽  
W. A. Lanford ◽  
A. E. Kaloyeros ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Oxide Growth ◽  
Copper Films ◽  
Experimental Conditions ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Plasma Reduction

AbstractOxidation kinetics of plasma-assisted chemical vapor deposited (PA-CVD) copper films were investigated using Rutherford backscattering spectrometry (RBS). The PA-CVD copper films were deposited using hydrogen plasma reduction of bis(hexafluoroacetylacetonato) copper(II), Cu(hfa)2, precursor. Under identical experimental conditions, PA-CVD copper films oxidize more slowly than sputtered copper films. This decrease in oxidationis manifested both as a time delay at the beginning of the oxidation of the PA-CVD copper films and as a decrease in the rate of oxide growth at oxidation temperatures of 200ºC and below. The possivation appears to be caused by the hydrogen plasma present during depostion.

Layer-by-Layer Oxidation of Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
T. Yasaka ◽  
M. Takakura ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxidation Rate ◽  
Pure Water ◽  
Oxygen Adsorption ◽  
Native Oxide ◽  
Oxide Growth ◽  
Layer By Layer ◽  
X Ray ◽  
P Type ◽  
Kinetics Of

ABSTRACTGrowth kinetics of native oxide on HF-treated Si surfaces terminated with Si-H bonds has been studied by angle-resolved x-ray photoelectron spectroscopy. The oxide growth rate in pure water for an n+ Si(100) surface is significantly high compared to that of p+, and the n or p type Si oxidation rate is in between. This is explained by the formation of ions through electron transfer from Si to adsorbed O2 molecules and the resulting enhancement of the oxidation rate. The oxide growth on Si(100) is faster than (110) and (111) as interpreted in terms of the steric hindrance for molecular oxygen adsorption on the hydrogen terminated silicon 1×1 surface structures.

Surface Oxidation Kinetics of GaAs Oxide Growth by Liquid Phase Chemical-Enhanced Technique

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4477-4480 ◽  
Author(s):  
Hwei-Heng Wang ◽  
Dei-Wei Chou ◽  
Jau-Yi Wu ◽  
Yeong-Her Wang ◽  
Mau-Phon Houng
Keyword(s):  
Liquid Phase ◽  
Oxidation Kinetics ◽  
Surface Oxidation ◽  
Oxide Growth ◽  
Kinetics Of ◽  
Phase Chemical
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