Electric field and strain effects on the electronic and optical properties of g-C3N4/WSe2 van der Waals heterostructure

2020 ◽  
Vol 501 ◽  
pp. 144262 ◽  
Author(s):  
Jiaxin Ye ◽  
Jiwen Liu ◽  
Yukai An
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Strain Effects ◽  
Electronic And Optical Properties ◽  
Van Der Waals Heterostructure

Electric field effects on the electronic and optical properties in C2N/Sb van der Waals heterostructure

Carbon ◽  
2018 ◽  
Vol 129 ◽  
pp. 738-744 ◽  
Author(s):  
Xiaolong Wang ◽  
Ruge Quhe ◽  
Wei Cui ◽  
Yusong Zhi ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Electronic And Optical Properties ◽  
Field Effects ◽  
Van Der Waals Heterostructure

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

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