A mathematical model for deep ion implantation depth profiling by synchrotron radiation grazing-incidence X-ray fluorescence spectrometry

2020 ◽  
Vol 35 (12) ◽  
pp. 2964-2973
Author(s):  
Mateusz Czyzycki ◽  
Mike Kokkoris ◽  
Andreas-Germanos Karydas
Keyword(s):  
Mathematical Model ◽  
Synchrotron Radiation ◽  
Ion Implantation ◽  
Standing Wave ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Shallow Depth ◽  
X Ray ◽  
Implantation Depth ◽  
Depth Distributions

Grazing-incidence X-ray fluorescence is applied to obtain shallow depth distributions using the X-ray standing wave (XSW). A new XSW-free mathematical model is proposed that allows the quantitative derivation of much deeper depth distributions.

Thermal Behaviour of Implanted Nitrogen and Accumulated Hydrogen in Titanium

1997 ◽  
Vol 504 ◽  
Author(s):  
M. Soltani-Farshi ◽  
H. Baumann ◽  
D. Rück ◽  
G. Walter ◽  
K. Bethge
Keyword(s):  
Ion Implantation ◽  
Depth Distribution ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Depth Profiles ◽  
Hydrogen Accumulation ◽  
Nitrogen Ion

ABSTRACTThe influence of nitrogen ion implantation on the hydrogen accumulation in titanium was investigated as function of sample temperature and ion fluence. 150 keV nitrogen (15N) ions were implanted at different sample temperatures up to 700°C with fluences ranging from 1 × 1017 to 1 × 1018 ions/cm2. The amount of accumulated hydrogen and its depth distribution was measured quantitatively with the 15N depth profiling method. The implanted 15N depth profiles were measured by the reverse reaction 15N(p, αγ)12C at 429 keV. The binary phases of the implanted nitrogen with titanium are detected by grazing incidence x-ray diffraction. The results are compared with those obtained for samples implanted at RT and subsequently thermally treated.

Grazing-incidence X-ray diffraction in the study of metallic clusters buried in glass obtained by ion implantation

1999 ◽  
Vol 32 (2) ◽  
pp. 234-240 ◽  
Author(s):  
Francesco d'Acapito ◽  
Federico Zontone
Keyword(s):  
Synchrotron Radiation ◽  
Ion Implantation ◽  
Metallic Nanoparticles ◽  
Grazing Incidence ◽  
Incidence Geometry ◽  
Parameter Determination ◽  
Structural Investigations ◽  
Diffraction Profile ◽  
X Ray ◽  
Metallic Clusters

A novel X-ray technique is described for carrying out structural investigations of metallic nanoparticles buried in glass obtained by ion implantation. The method consists of maximizing the scattering contribution of the cluster-rich layer by working at the critical angle for total external reflection at the implanted-layer–substrate interface. By using the refracted beam as a probe, the diffraction profile of the metallic clusters in very dilute samples can be extracted by a simple subtraction procedure. The new procedure is applied to SiO2glasses implanted with Ag ions. The study was performed at the European Synchrotron Radiation Facility. The results indicate that a complete structural investigation can be performed by using highly collimated, very intense synchrotron radiation beams, a grazing-incidence geometry and two-dimensional detectors. The procedure is shown to be very useful for complementing the information from electron techniques (transmission electron microscopy, micro-beam electron diffraction) and X-ray spectroscopic (EXAFS) methods. In particular, the accuracy of the lattice-parameter determination is shown to be a factor of nine better than the accuracy of EXAFS results.

EPITAXY OF ULTRATHIN CoO FILMS STUDIED BY XPD AND GIXRD

2002 ◽  
Vol 09 (02) ◽  
pp. 937-941 ◽  
Author(s):  
P. LUCHES ◽  
C. GIOVANARDI ◽  
T. MOIA ◽  
S. VALERI ◽  
F. BRUNO ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Lattice Constant ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Direction Parallel ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Rocksalt Structure ◽  
Plane Lattice

CoO layers have been grown by exposing to oxygen the (001) body-centered-tetragonal (bct) surface of a Co ultrathin film epitaxially grown on Fe(001). Different oxide thicknesses in the 2–15 ML range have been investigated by means of synchrotron-radiation-based techniques. X-ray photoelectron spectroscopy has been used to check the formation of the oxide films; X ray photoelectron diffraction has given information concerning the symmetry of their unit cell; grazing incidence X-ray diffraction has allowed to evaluate precisely their in-plane lattice constant. The films show a CoO(001) rocksalt structure, rotated by 45° with respect to the bct Co substrate, with the [100] direction parallel to the substrate [110] direction. Their in-plane lattice constant increases as a function of thickness, to release the in-plane strain due to the 3% mismatch between the bulk CoO phase and the underlying substrate.

X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

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