Novel hierarchical CuNiAl LDH nanotubes with excellent peroxidase-like activity for wide-range detection of glucose

2021 ◽  
Vol 50 (1) ◽  
pp. 95-102
Author(s):  
Lihong Wu ◽  
Xuechun Zhou ◽  
Gengping Wan ◽  
Yulin Tang ◽  
Shaohua Shi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Layered Double Hydroxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Wide Range ◽  
Double Hydroxide

Novel hierarchical CuNiAl layered double hydroxide (CuNiAl LDH) nanotubes were prepared with the help of atomic layer deposition (ALD) method and exhibited excellent peroxidase mimicking property.

Tunable nano-interfaces between MnOx and layered double hydroxides boost oxygen evolving electrocatalysis

2018 ◽  
Vol 6 (44) ◽  
pp. 21918-21926 ◽  
Author(s):  
Yudong Xue ◽  
Zachary S. Fishman ◽  
Jason A. Röhr ◽  
Zhenhua Pan ◽  
Yunting Wang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Layered Double Hydroxide ◽  
Layered Double Hydroxides ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Oxygen Evolving ◽  
Double Hydroxide ◽  
Double Hydroxides

Nano-interfaces between MnOx islands and NiFe layered double hydroxide (LDH) nanosheets were tuned using atomic layer deposition thereby enhancing oxygen evolution activity.

scholarly journals Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs

2018 ◽  
Vol 64 (3) ◽  
pp. 206
Author(s):  
R. S. Castillo Ojeda ◽  
Joel Díaz-Reyes ◽  
M. Galván-Arellano ◽  
K. N. Rivera-Hernández ◽  
M. S. Villa-Ramírez ◽  
...  
Keyword(s):  
High Resolution ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition ◽  
Wide Range ◽  
Cdte Growth

In this work are presented the results obtained from the deposition ofCd1-xZnxTe nanolayers using as precursor the vapours of the elementsZn, Te, and a mixture of Cd and Zn on GaAs and GaSb (001) substrates by Atomic Layer Deposition technique (ALD), which allows the deposition of layers of nanometric dimensions. At each exposure of the growth surface to the of cation or anion precursors vapours, this surface is saturated. Therefore, it is considered that the process is self-regulated. The ZnTe layers were grown in a wide range of temperatures; however, ZnTe nanolayers with a shiny mirror-like surface could be grown at temperatures between 370 and 410oC. Temperatures higher than 400oC were necessary for the CdTe growth. The layers of the Cd1-xZnxTe ternary alloy were deposited at temperature range of 400 and 425oC. The grown nanofilms were characterized by Raman spectroscopy and high-resolution X-ray diffraction. The Raman spectrumshows the peak corresponding to LO-ZnTe at 208 cm-1, which is weak and is slightly redshifted in comparison with the reported for the bulk ZnTe. For the case of the CdTe nanolayers, Raman spectrum presents the LO-CdTe peak, which is indicative of the successfully growth of the nanolayers, its weakness and its slight redshifted in comparison with the reported for the bulk CdTe can be related with the nanometric characteristic of this layer. The performed high resolution X-ray diffraction measurements allowed to study some importantcharacteristics, as the crystallinity of the grown layers. Additionally, the performed HR-XRD measurements suggest that the crystalline quality have dependence with the growth temperature.

scholarly journals Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition

2015 ◽  
Vol 3 (37) ◽  
pp. 9620-9630 ◽  
Author(s):  
Ali Haider ◽  
Seda Kizir ◽  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Shahid Ali Leghari ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Band Gap ◽  
Hollow Cathode ◽  
Optical Band Gap ◽  
Atomic Layer ◽  
Cathode Plasma ◽  
Layer Deposition ◽  
Wide Range

Hollow cathode plasma assisted atomic layer deposited InxGa1−xN alloys show successful tunability of the optical band gap by changing the In concentration in a wide range.

scholarly journals Atomic layer deposition of vanadium oxides for thin-film lithium-ion battery applications

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114658-114665 ◽  
Author(s):  
Felix Mattelaer ◽  
Kobe Geryl ◽  
Geert Rampelberg ◽  
Thomas Dobbelaere ◽  
Jolien Dendooven ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Lithium Ion Battery ◽  
Lithium Ion ◽  
Atomic Layer ◽  
Vanadium Oxides ◽  
Lithium Insertion ◽  
Layer Deposition ◽  
Wide Range

A wide range of vanadium oxides is demostrated as lithium ion cathodes by a combination of ALD and post-ALD anneal, with lithium insertion capacities up to 1380 mAh cm−3.

scholarly journals Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7478
Author(s):  
Seon Yong Kim ◽  
Yong Chan Jung ◽  
Sejong Seong ◽  
Taehoon Lee ◽  
In-Sung Park ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Energy ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Semiconductor ◽  
Layer Deposition ◽  
Wide Range

Hafnium oxide (HfOx) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO3)3·6H2O solution (LNS) as an oxidant was investigated. The atomic layer deposition (ALD) conditions were optimized, and the chemical state, surface morphology, and microstructure of the prepared films were characterized. Furthermore, to better understand the effects of LNS on the deposition process, HfOx films deposited using a conventional oxidant (H2O) were also prepared. The ALD process using LNS was observed to be self-limiting, with an ALD temperature window of 200–350 °C and a growth rate of 1.6 Å per cycle, two times faster than that with H2O. HfOx films deposited using the LNS oxidant had smaller crystallites than those deposited using H2O, as well as more suboxides or defects because of the higher number of grain boundaries. In addition, there was a difference in the preferred orientations of the HfOx films deposited using LNS and H2O, and consequently, a difference in surface energy. Finally, a film growth model based on the surface energy difference was proposed to explain the observed growth rate and crystallite size trends.

Atomic layer deposition of crystalline epitaxial MoS2 nanowall networks exhibiting superior performance in thin-film rechargeable Na-ion batteries

2018 ◽  
Vol 6 (5) ◽  
pp. 2302-2310 ◽  
Author(s):  
M. B. Sreedhara ◽  
Subhra Gope ◽  
Badri Vishal ◽  
Ranjan Datta ◽  
Aninda J. Bhattacharyya ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Capacity ◽  
Rate Capability ◽  
Atomic Layer ◽  
High Rate ◽  
Superior Performance ◽  
Epitaxial Relationship ◽  
Layer Deposition ◽  
Wide Range ◽  
Nanowall Network

Nanowall network of MoS2 grown by atomic layer deposition shows single crystalline nature and epitaxial relationship with c-sapphire. The nanowall network grown directly on current collector exhibits high capacity, remarkable stability, cyclability and high rate capability over a wide range of operating currents.

Fabrication of Multilayer ZnO/TiO2/ZnO Thin Films with Enhancement of Optical Properties by Atomic Layer Deposition (ALD)

2013 ◽  
Vol 465-466 ◽  
pp. 916-921 ◽  
Author(s):  
Rosniza Hussin ◽  
Kwang Leong Choy ◽  
Xiang Hui Hou
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Single Layer ◽  
Atomic Layer ◽  
Degree Of Crystallinity ◽  
Multilayer Thin Films ◽  
Layer Deposition ◽  
Vis Spectroscopy ◽  
Wide Range

Atomic layer deposition (ALD) is a precision growth technique that is able to deposit either amorphous or epitaxial layer on a wide range of substrates. Multilayer thin films have been widely studied because their properties are different from those of bulk materials constituents owing to the two-dimensional films and high density of interfaces. Multilayer nanostructured thin films were fabricated on silicon and glass substrates by ALD. The optical and electrical of multilayer ZnO/TiO2/ZnO films were investigated. The microstructure compositions and surface morphology of these multilayer films were analyzed by X-ray diffraction (XRD), Atomic force microscope (AFM) and Scanning electron microscope (SEM). The optical properties were characterized using photoluminescence (PL) and UV-VIS spectroscopy. XRD patterns confirmed that ZnO with wutrtize crystal structure and TiO2 with anatase structure were presented. The degree of crystallinity of multilayer thin films has been improved through the deposition of ZnO. The intensity of UV luminescence of the multilayer has increased as compared to the single layer TiO2 and bilayer ZnO/TiO2. The multilayer ZnO/TiO2/ZnO has high transmittance (above 80%) in visible region. All the result suggested that the use of multilayer thin films effectively enhanced the quality of films crystallinity and optical properties as compared to single layer ZnO and bilayer ZnO/TiO2.

Atomic layer deposition of nanoparticles on self-assembled monolayer modified silicon substrate

2013 ◽  
Vol 1546 ◽  
Author(s):  
Kun Cao ◽  
Zhilong Ren ◽  
Shengmei Xiang ◽  
Bin Shan ◽  
Rong Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Substrate ◽  
Particle Diameter ◽  
Atomic Layer ◽  
Pd Nanoparticles ◽  
Noble Metal Nanoparticles ◽  
Self Assembled Monolayer ◽  
Layer Deposition ◽  
Wide Range ◽  
Self Assembled

ABSTRACTAtomic layer deposition has attracted much attention recently in fabricating noble metal nanoparticles for a wide range of applications. We have explored synthesizing palladium nanoparticles via atomic layer deposition on self-assembled monolayers modified silicon substrate. Using alkyltrichlorosilanes as the passivating agents, our results show the method is capable of fabricating Pd nanoparticles with well controlled density and particle diameter on the modified silicon substrate.

scholarly journals Formation and Photoluminescence Properties of ZnO Nanoparticles on Electrospun Nanofibers Produced by Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1199 ◽  
Author(s):  
Valerii Myndrul ◽  
Lucie Vysloužilová ◽  
Andrea Klápšťová ◽  
Emerson Coy ◽  
Mariusz Jancelewicz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Polyvinylidene Fluoride ◽  
Electrospun Nanofibers ◽  
Atomic Layer ◽  
Excitation Power ◽  
Electrospinning Technique ◽  
X Ray ◽  
Layer Deposition ◽  
Polymer Nanofiber ◽  
Wide Range

The unique combination of optical, chemical, and structural properties of one-dimensional zinc oxide (1D ZnO) makes it one of the most attractive materials in a wide range of research and applications. In the present study, 1D ZnO nanomaterials were fabricated using a combination of two independent methods: electrospinning and atomic layer deposition (ALD). The electrospinning technique was used to produce 1D electrospun fibers consisting of four types of polymers: polylactic acid (PLLA), polyvinylidene fluoride (PVDF), polyvinyl alcohol (PVA), and polyamide 6 (PA6). The ALD technology, in turn, was selected as an excellent candidate for the synthesis of a ZnO thin layer over polymer fibers for the production of 1D ZnO/polymer nanofiber composites (PLLA/ZnO, PVDF/ZnO, PVA/ZnO, PA6/ZnO). Structural and optical properties of the produced nanofibers were studied by means of scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), diffuse reflectance, and photoluminescence (PL) spectroscopy. It was found that only PVDF/ZnO nanofibers exhibit stable room temperature PL that may be the result of a higher ZnO content in the sample. In addition, PL measurements were conducted as a function of excitation power and temperature in order to establish the main PL mechanisms and parameters for the PVDF/ZnO sample, as a most promising candidate for the biophotonic application.

scholarly journals Atomic layer deposition of nickel–cobalt spinel thin films

2017 ◽  
Vol 46 (14) ◽  
pp. 4796-4805 ◽  
Author(s):  
D. J. Hagen ◽  
T. S. Tripathi ◽  
M. Karppinen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical And Magnetic Properties ◽  
Cobalt Spinel ◽  
Nickel Cobalt ◽  
Layer Deposition ◽  
Wide Range

Combining ALD cycles for NiO and Co3O4, (Co1−xNix)3O4 films with a wide range of electrical and magnetic properties are obtained.

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