Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
2015 ◽
Vol 3
(37)
◽
pp. 9620-9630
◽
Keyword(s):
Band Gap
◽
Hollow cathode plasma assisted atomic layer deposited InxGa1−xN alloys show successful tunability of the optical band gap by changing the In concentration in a wide range.
2015 ◽
Vol 12
(4-5)
◽
pp. 394-398
◽
Keyword(s):
2014 ◽
Vol 2
(12)
◽
pp. 2123-2136
◽
2014 ◽
Vol 32
(3)
◽
pp. 031508
◽
Keyword(s):
2020 ◽
Vol 38
(6)
◽
pp. 062407
Keyword(s):
2021 ◽
Vol 39
(4)
◽
pp. 042403
Keyword(s):
Keyword(s):
2016 ◽
Vol 31
(7)
◽
pp. 075003
◽
2015 ◽
Vol 33
(1)
◽
pp. 01A143
◽
Keyword(s):