scholarly journals Gigantic work function in layered AgF2

2020 ◽  
Vol 22 (38) ◽  
pp. 21809-21815
Author(s):  
Wojciech Wegner ◽  
Kamil Tokár ◽  
Jose Lorenzana ◽  
Mariana Derzsi ◽  
Wojciech Grochala
Keyword(s):  
Work Function ◽  
Electronic Devices ◽  
Band Alignment ◽  
Unusual Property ◽  
Type Band ◽  
Broken Gap

The calculated work function of a powerful oxidizer, AgF2, is 7.76 eV, thus exceeds even that of fluorinated diamond. This unusual property could be used for fabrication of novel junction electronic devices showing ‘‘broken-gap’’ type band alignment.

scholarly journals Electric-dipole effect of defects on the energy band alignment of rutile and anatase TiO2

2015 ◽  
Vol 17 (43) ◽  
pp. 29079-29084 ◽  
Author(s):  
Daoyu Zhang ◽  
Minnan Yang ◽  
Shuai Dong
Keyword(s):  
Electric Dipole ◽  
Energy Band ◽  
Anatase Tio2 ◽  
Band Alignment ◽  
Type Band

DFT+U calculations determined that the perfect rutile(110) and anatase(101) surfaces have the straddling type band alignment, whereas surfaces with defects have the staggered type.

Work function mapping of MoOx thin-films for application in electronic devices

2017 ◽  
Vol 183 ◽  
pp. 99-103 ◽  
Author(s):  
André L.F. Cauduro ◽  
Roberto dos Reis ◽  
Gong Chen ◽  
Andreas K. Schmid ◽  
Horst-Günter Rubahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Electronic Devices ◽  
Function Mapping

Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4701-4706 ◽  
Author(s):  
Tiaoyang Li ◽  
Xuefei Li ◽  
Mengchuan Tian ◽  
Qianlan Hu ◽  
Xin Wang ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Black Phosphorus ◽  
Band Alignment ◽  
Narrow Bandgap ◽  
Interband Tunneling ◽  
Broken Gap

We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.

scholarly journals Band alignment in molecular devices: Influence of anchoring group and metal work function

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Jian-guo Wang ◽  
Emil Prodan ◽  
Roberto Car ◽  
Annabella Selloni
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Molecular Devices ◽  
Metal Work Function ◽  
Anchoring Group ◽  
Metal Work

scholarly journals Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Yongqing Cai ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Work Function ◽  
Band Alignment

scholarly journals Work function investigations of Al-doped ZnO for band-alignment in electronic and optoelectronic applications

2019 ◽  
Vol 484 ◽  
pp. 990-998 ◽  
Author(s):  
Grant Drewelow ◽  
Austin Reed ◽  
Chandon Stone ◽  
Kwangdong Roh ◽  
Zhong-Tao Jiang ◽  
...  
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Doped Zno ◽  
Optoelectronic Applications

scholarly journals Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 82 ◽  
Author(s):  
David K. Sang ◽  
Huide Wang ◽  
Meng Qiu ◽  
Rui Cao ◽  
Zhinan Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Work Function ◽  
High Performance ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Band Alignment ◽  
Thickness Variation ◽  
Two Dimensional ◽  
Electronic Band

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.

Role of Surfaces and Interfaces for the Electronic Properties of Conducting Oxides

2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Surface Band ◽  
Band Bending ◽  
Conducting Oxides ◽  
Degenerate Semiconductors ◽  
Surfaces And Interfaces

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.

scholarly journals Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Materials ◽  
2010 ◽  
Vol 3 (11) ◽  
pp. 4892-4914 ◽  
Author(s):  
Andreas Klein ◽  
Christoph Körber ◽  
André Wachau ◽  
Frank Säuberlich ◽  
Yvonne Gassenbauer ◽  
...  
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Energy Band ◽  
Transparent Conducting Oxides ◽  
Band Alignment ◽  
Conducting Oxides ◽  
Transparent Conducting
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