scholarly journals Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

2012 ◽  
Vol 112 (9) ◽  
pp. 094312 ◽  
Author(s):  
Y. Zhu ◽  
N. Jain ◽  
S. Vijayaraghavan ◽  
D. K. Mohata ◽  
S. Datta ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Band Alignment ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Broken Gap

Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy

2012 ◽  
Vol 100 (10) ◽  
pp. 102104 ◽  
Author(s):  
Qin Zhang ◽  
Guangle Zhou ◽  
Huili G. Xing ◽  
Alan C. Seabaugh ◽  
Kun Xu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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