scholarly journals Work function investigations of Al-doped ZnO for band-alignment in electronic and optoelectronic applications

2019 ◽  
Vol 484 ◽  
pp. 990-998 ◽  
Author(s):  
Grant Drewelow ◽  
Austin Reed ◽  
Chandon Stone ◽  
Kwangdong Roh ◽  
Zhong-Tao Jiang ◽  
...  
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Doped Zno ◽  
Optoelectronic Applications

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

scholarly journals Band alignment in molecular devices: Influence of anchoring group and metal work function

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Jian-guo Wang ◽  
Emil Prodan ◽  
Roberto Car ◽  
Annabella Selloni
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Molecular Devices ◽  
Metal Work Function ◽  
Anchoring Group ◽  
Metal Work

Investigation of band alignment in Co doped ZnO/ZnO heterostructure

2017 ◽  
Author(s):  
Girish ◽  
Parasmani Rajput ◽  
Mangla Nand ◽  
Manvendra Kumar ◽  
Mukul Gupta ◽  
...  
Keyword(s):  
Band Alignment ◽  
Doped Zno ◽  
Co Doped

scholarly journals Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Yongqing Cai ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Work Function ◽  
Band Alignment

Optimization of physical properties of transparent conductive F and Ga co-doped ZnO films for optoelectronic applications

2020 ◽  
Vol 269 ◽  
pp. 127591
Author(s):  
Yanfeng Wang ◽  
Jianmin Song ◽  
Yajuan Guo ◽  
Xiaochen Duan ◽  
Zelong Li ◽  
...  
Keyword(s):  
Physical Properties ◽  
Zno Films ◽  
Doped Zno ◽  
Optoelectronic Applications ◽  
Co Doped

scholarly journals Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 82 ◽  
Author(s):  
David K. Sang ◽  
Huide Wang ◽  
Meng Qiu ◽  
Rui Cao ◽  
Zhinan Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Work Function ◽  
High Performance ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Band Alignment ◽  
Thickness Variation ◽  
Two Dimensional ◽  
Electronic Band

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document