Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers

2011 ◽  
Vol 98 (20) ◽  
pp. 202105 ◽  
Author(s):  
Patrik Ščajev ◽  
Alexander Usikov ◽  
Vitali Soukhoveev ◽  
Ramūnas Aleksiejūnas ◽  
Kęstutis Jarašiūnas
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Nonradiative Recombination ◽  
Extended Defects ◽  
Diffusion Limited

scholarly journals Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

CrystEngComm ◽  
2020 ◽  
Vol 22 (48) ◽  
pp. 8299-8312
Author(s):  
Yongzhao Yao ◽  
Yoshihiro Sugawara ◽  
Daisaku Yokoe ◽  
Koji Sato ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocations ◽  
Nonradiative Recombination

Nonradiative recombination behaviors of threading dislocations and their correlation with the dislocation types.

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy

2009 ◽  
Vol 517 (6) ◽  
pp. 2088-2091 ◽  
Author(s):  
X.C. Cao ◽  
D.L. Xu ◽  
H.M. Guo ◽  
C.J. Liu ◽  
Z.J. Yin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Reactor Pressure

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates
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