Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

CrystEngComm ◽  
2020 ◽  
Vol 22 (33) ◽  
pp. 5416-5435
Author(s):  
Natalia V. Morozova ◽  
Igor V. Korobeinikov ◽  
Nikolay V. Abrosimov ◽  
Sergey V. Ovsyannikov
Keyword(s):  
High Pressure ◽  
Thermoelectric Power ◽  
Silicon Germanium ◽  
Next Generation ◽  
Crystalline Phases ◽  
Nanoelectronic Devices ◽  
Electronic Junctions ◽  
Silicon Germanium Alloys

Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.

Properties of polymorphous silicon–germanium alloys deposited under high hydrogen dilution and at high pressure

2002 ◽  
Vol 92 (9) ◽  
pp. 4959-4967 ◽  
Author(s):  
M. E. Gueunier ◽  
J. P. Kleider ◽  
R. Brüggemann ◽  
S. Lebib ◽  
P. Roca i Cabarrocas ◽  
...  
Keyword(s):  
High Pressure ◽  
Silicon Germanium ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Silicon Germanium Alloys

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

2013 ◽  
Vol 16 (6) ◽  
pp. 1655-1658 ◽  
Author(s):  
A. Belafhaili ◽  
L. Laânab ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
A. Claverie
Keyword(s):  
Ion Implantation ◽  
Silicon Germanium ◽  
Germanium Content ◽  
Silicon Germanium Alloys

Femtosecond spectroscopy in amorphous silicon and silicon-germanium alloys

1987 ◽  
Vol 97-98 ◽  
pp. 145-148 ◽  
Author(s):  
P.M. Fauchet ◽  
D. Hulin ◽  
A. Migus ◽  
A. Antonetti ◽  
J.P. Conde ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Femtosecond Spectroscopy ◽  
Silicon Germanium Alloys

Oxidation of silicon–germanium alloys. I. An experimental study

1997 ◽  
Vol 82 (11) ◽  
pp. 5773-5778 ◽  
Author(s):  
P.-E. Hellberg ◽  
S.-L. Zhang ◽  
F. M. d’Heurle ◽  
C. S. Petersson
Keyword(s):  
Experimental Study ◽  
Silicon Germanium ◽  
Silicon Germanium Alloys
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