Properties of polymorphous silicon–germanium alloys deposited under high hydrogen dilution and at high pressure

2002 ◽  
Vol 92 (9) ◽  
pp. 4959-4967 ◽  
Author(s):  
M. E. Gueunier ◽  
J. P. Kleider ◽  
R. Brüggemann ◽  
S. Lebib ◽  
P. Roca i Cabarrocas ◽  
...  
Keyword(s):  
High Pressure ◽  
Silicon Germanium ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Silicon Germanium Alloys

Development of Stable a-Si/a-SiGe Tandem Solar Cell Submodules Deposited by a Very High Hydrogen Dilution at Low Temperature

1998 ◽  
Vol 507 ◽  
Author(s):  
Masaki Shima ◽  
Masao Isomura ◽  
Eiji Maruyama ◽  
Shingo Okamoto ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Structural Variations ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Hydrogen Radicals ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Very High

ABSTRACTThe world's highest stabilized efficiency of 9.5% (light-soaked and measured by the Japan Quality Assurance Organization (JQA)) for an a-Si/a-SiGe superstrate-type solar cell submodule (area: 1200 cm2) has been achieved. This value was obtained by investigating the effects of very-high hydrogen dilution of up to 54:1 (= H2: SiH4) on hydrogenated amorphous silicon germanium (a-SiGe:H) deposition at a low substrate temperature (Ts). It was found that deterioration of the film properties of a-SiGe:H when Ts decreases under low hydrogen dilution conditions can be suppressed by the high hydrogen dilution. This finding probably indicates that the energy provided by hydrogen radicals substitutes for the lost energy caused by the decrease in Ts and that sufficient surface reactions can occur. In addition, results from an estimation of the hydrogen and germanium contents of a-SiGe:H suggest the occurrence of some kinds of structural variations by the high hydrogen dilution. A guideline for optimization of a-SiGe:H films for solar cells can be presented on the basis of the experimental results. The possibility of a-SiGe:H as a narrow gap material for a-Si stacked solar cells in contrast with microcrystalline silicon (μ c-Si:H) will also be discussed from various standpoints. At present, a-SiGe:H is considered to have an advantage over μ1 c-Si:H.

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

CrystEngComm ◽  
2020 ◽  
Vol 22 (33) ◽  
pp. 5416-5435
Author(s):  
Natalia V. Morozova ◽  
Igor V. Korobeinikov ◽  
Nikolay V. Abrosimov ◽  
Sergey V. Ovsyannikov
Keyword(s):  
High Pressure ◽  
Thermoelectric Power ◽  
Silicon Germanium ◽  
Next Generation ◽  
Crystalline Phases ◽  
Nanoelectronic Devices ◽  
Electronic Junctions ◽  
Silicon Germanium Alloys

Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.

Improvement of microstructure of amorphous silicon–germanium alloys by hydrogen dilution

1995 ◽  
Vol 78 (8) ◽  
pp. 4966-4974 ◽  
Author(s):  
A. R. Middya ◽  
Swati Ray ◽  
S. J. Jones ◽  
D. L. Williamson
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogen Dilution ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

An Amorphous Silicon Alloy Triple-Junction Solar Cell with 14.6% Initial and 13.0% Stable Efficiencies

1997 ◽  
Vol 467 ◽  
Author(s):  
J. Yang ◽  
A. Banerjee ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Triple Junction ◽  
Silicon Germanium ◽  
Steel Substrate ◽  
Transparent Conductive Oxide ◽  
Multilayered Structure ◽  
High Hydrogen ◽  
Silicon Alloy ◽  
Spectrum Splitting ◽  
Hydrogen Dilution

ABSTRACTAn initial conversion efficiency of 14.6% has been achieved using amorphous silicon-based alloy in a spectrum splitting triple-junction structure. After 1000 hours of indoor one-sun light soaking at 50 °C, the stabilized efficiency is 13.0%. Both efficiencies are the highest reported to date for amorphous silicon alloy solar cells and have been independently confirmed by the National Renewable Energy Laboratory. The device was deposited onto a stainless steel substrate coated with textured silver/zinc oxide back reflector. The bottom and middle cells use amorphous silicon-germanium alloys, employing high hydrogen dilution in the gas mixture and bandgap profiling in the cell design. The top cell uses amorphous silicon alloy with high hydrogen dilution. Key factors leading to the achievement include a) improvement of the bottom cell that exhibits an AM1.5 efficiency of 10.4% and quantum efficiency of 45% at 850 nm; b) improvement of the tunnel junctions between the component cells by incorporating a novel multilayered structure with microcrystalline p and n layers; and c) improvement of transparent conductive oxide for enhancing the short wavelength response of the top cell.

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