Graphene/SiC heterojunction nanoarrays: toward field emission applications with low turn-on fields and high stabilities

2019 ◽  
Vol 7 (44) ◽  
pp. 13748-13753 ◽  
Author(s):  
Lin Wang ◽  
Lan Jiang ◽  
Tian Zhang ◽  
Fengmei Gao ◽  
Shanliang Chen ◽  
...  
Keyword(s):  
Field Emission ◽  
Enhancement Factor ◽  
High Field ◽  
Field Enhancement ◽  
Field Enhancement Factor ◽  
Small Current ◽  
Current Fluctuation ◽  
Turn On

Graphene/SiC heterojunction nanoarray emitters were reported, which had low turn-on field, small current fluctuation and high field enhancement factor.

Template synthesis of metal tungsten nanowire bundles with high field electron emission performance

RSC Advances ◽  
2016 ◽  
Vol 6 (67) ◽  
pp. 62668-62674 ◽  
Author(s):  
Yong Liu ◽  
Kun Lan ◽  
Mahir H. Es-Saheb ◽  
Ahmed A. Elzatahry ◽  
Dongyuan Zhao
Keyword(s):  
Field Emission ◽  
Template Synthesis ◽  
Electron Emission ◽  
Enhancement Factor ◽  
High Field ◽  
Field Enhancement ◽  
Field Electron Emission ◽  
Field Enhancement Factor ◽  
Emission Performance ◽  
Turn On

A H2 reduction-assisted hard-templating approach is demonstrated to synthesize metallic W nanowire bundles. The W nanowire bundles show a low turn-on field of 4.1 V μm−1, a high field enhancement factor up to 3563 and good field emission stability.

Field emission behaviors of CsPbI3 nanobelts

2020 ◽  
Vol 8 (15) ◽  
pp. 5156-5162
Author(s):  
Zhentao Du ◽  
Fulin Jiang ◽  
Jinju Zheng ◽  
Shanliang Chen ◽  
Fengmei Gao ◽  
...  
Keyword(s):  
Field Emission ◽  
Enhancement Factor ◽  
High Field ◽  
Field Enhancement ◽  
Field Enhancement Factor ◽  
Turn On

We report the field emission behaviors of CsPbI3 nanobelts, which had a low turn-on field of ∼2.62 V μm−1 with a high field enhancement factor of 3553.

Effect of distribution of field enhancement factor on field emission from cathode with a large number of emission sites

2005 ◽  
Vol 484 (1-2) ◽  
pp. 379-381 ◽  
Author(s):  
Guang Yuan ◽  
Hang Song ◽  
Yixin Jin ◽  
Hidenori Mimura ◽  
Kuniyoshi Yokoo
Keyword(s):  
Field Emission ◽  
Enhancement Factor ◽  
Field Enhancement ◽  
Field Enhancement Factor

scholarly journals Field enhancement factor and field emission from a hemi-ellipsoidal metallic needle

2009 ◽  
Vol 109 (4) ◽  
pp. 373-378 ◽  
Author(s):  
Evgeny G. Pogorelov ◽  
Alexander I. Zhbanov ◽  
Yia-Chung Chang
Keyword(s):  
Field Emission ◽  
Enhancement Factor ◽  
Field Enhancement ◽  
Field Enhancement Factor

Electron Field Emission from GaN Nanotip Pyramids

2003 ◽  
Vol 798 ◽  
Author(s):  
Hock M. Ng ◽  
Jonathan Shaw ◽  
Aref Chowdhury ◽  
Nils G. Weimann
Keyword(s):  
Field Emission ◽  
Enhancement Factor ◽  
Molecular Beam ◽  
Field Enhancement ◽  
Electron Field Emission ◽  
Polar Regions ◽  
Turn On ◽  
Electron Field ◽  
Selective Chemical ◽  
20 Nm

ABSTRACTElectron field emission was measured from GaN nanotip pyramids formed by polarity-selective chemical etching in KOH solution. The GaN samples were grown by plasma-assisted molecular beam epitaxy and consisted of regions of Ga- and N-polar GaN grown at the same time. The pyramids were formed only in the N-polar regions and have extremely sharp tips with diameters estimated to be less than 20 nm. Field emission measurements showed a characteristic Fowler-Nordheim behavior. The average turn-on field was 1.6 V/μm with a corresponding normalized field enhancement factor of about 1500.

Near-Field Calibration of Isolated Carbon Nanotube Field Emitters for Nanomanufacturing Applications

2004 ◽  
Author(s):  
King-Fu Hii ◽  
R. Ryan Vallance ◽  
Padmakar D. Kichambare ◽  
M. Pinar Mengu¨c¸
Keyword(s):  
Carbon Nanotube ◽  
Enhancement Factor ◽  
Near Field ◽  
Field Enhancement ◽  
Field Enhancement Factor ◽  
Strong Function ◽  
Field Calibration ◽  
Turn On ◽  
Field Emitters ◽  
Precise Knowledge

This paper reports the development of an apparatus, technique, and method for calibrating the field emission phenomena’s dependence on both the voltage applied between the anode and cathode and the electrodes gap. A precise knowledge of the electrodes gap is required for calibrating field emitters. The I-V characteristic of isolated carbon nanotube field emitter is a strong function of the electrodes gap distance. A consolidated IV curve is obtained by calculating the current density and the local electric field with the field enhancement factor taken into consideration. The field enhancement factor and emitting area are unique for each electrodes gap distance. We also found that the turn-on voltage decreases as the electrodes gap distance decreases.

Enhancement of Electron Emission Properties of Carbon Nanotubes by the Decoration with Low Work Function Metal Oxide Nanoparticles

2020 ◽  
Vol 20 (10) ◽  
pp. 6463-6468 ◽  
Author(s):  
Mohammad M. H. Raza ◽  
Sunny Khan ◽  
Mohd Sadiq ◽  
Mohammad Zulfequar ◽  
Mushahid Husain ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Work Function ◽  
Field Emission ◽  
Electron Emission ◽  
Enhancement Factor ◽  
Metal Oxide Nanoparticles ◽  
Field Enhancement ◽  
Field Enhancement Factor ◽  
Oxide Nanoparticles ◽  
Emission Properties

In the present report, the properties of the field emission devices of carbon nanotubes (CNTs) were remarkably improved by decorating their surface with magnesium oxide nanoparticles (MgO NPs). The MgO NPs were attached effectively on the surface of CNTs via thermal evaporation. The Raman spectra confirm the graphitic order of as-grown pristine CNTs with RBM (radial breathing mode), D band and G band peaks at the 282 cm−1, 1347 cm−1 and 1594 cm−1 respectively. The peak at 471 cm−1 indicates successful attachment of MgO NPs to the CNTs. The enhanced field emission properties of CNTs were mainly attributed to the MgO NPs which increased the field enhancement factor and the density of emission sites. The decreased work function and increased field enhancement factor were responsible for the improved FE properties of the CNTs. Our results indicate that the MgO decorated CNTs can be used as an effective field emitter for various electron emission devices. The turn-on field decrease from 1.6 V/μm to 1.3 V/μm and the maximum current density increases from 1.581 to 3.678 mA/cm2 after the decoration of CNTs with MgO NPs. The value of field enhancement factor (β) also increases from 2.814×103 to 9.823×103.

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