Template synthesis of metal tungsten nanowire bundles with high field electron emission performance

RSC Advances ◽  
2016 ◽  
Vol 6 (67) ◽  
pp. 62668-62674 ◽  
Author(s):  
Yong Liu ◽  
Kun Lan ◽  
Mahir H. Es-Saheb ◽  
Ahmed A. Elzatahry ◽  
Dongyuan Zhao

A H2 reduction-assisted hard-templating approach is demonstrated to synthesize metallic W nanowire bundles. The W nanowire bundles show a low turn-on field of 4.1 V μm−1, a high field enhancement factor up to 3563 and good field emission stability.

2019 ◽  
Vol 7 (44) ◽  
pp. 13748-13753 ◽  
Author(s):  
Lin Wang ◽  
Lan Jiang ◽  
Tian Zhang ◽  
Fengmei Gao ◽  
Shanliang Chen ◽  
...  

Graphene/SiC heterojunction nanoarray emitters were reported, which had low turn-on field, small current fluctuation and high field enhancement factor.


2020 ◽  
Vol 8 (15) ◽  
pp. 5156-5162
Author(s):  
Zhentao Du ◽  
Fulin Jiang ◽  
Jinju Zheng ◽  
Shanliang Chen ◽  
Fengmei Gao ◽  
...  

We report the field emission behaviors of CsPbI3 nanobelts, which had a low turn-on field of ∼2.62 V μm−1 with a high field enhancement factor of 3553.


2020 ◽  
Vol 20 (10) ◽  
pp. 6463-6468 ◽  
Author(s):  
Mohammad M. H. Raza ◽  
Sunny Khan ◽  
Mohd Sadiq ◽  
Mohammad Zulfequar ◽  
Mushahid Husain ◽  
...  

In the present report, the properties of the field emission devices of carbon nanotubes (CNTs) were remarkably improved by decorating their surface with magnesium oxide nanoparticles (MgO NPs). The MgO NPs were attached effectively on the surface of CNTs via thermal evaporation. The Raman spectra confirm the graphitic order of as-grown pristine CNTs with RBM (radial breathing mode), D band and G band peaks at the 282 cm−1, 1347 cm−1 and 1594 cm−1 respectively. The peak at 471 cm−1 indicates successful attachment of MgO NPs to the CNTs. The enhanced field emission properties of CNTs were mainly attributed to the MgO NPs which increased the field enhancement factor and the density of emission sites. The decreased work function and increased field enhancement factor were responsible for the improved FE properties of the CNTs. Our results indicate that the MgO decorated CNTs can be used as an effective field emitter for various electron emission devices. The turn-on field decrease from 1.6 V/μm to 1.3 V/μm and the maximum current density increases from 1.581 to 3.678 mA/cm2 after the decoration of CNTs with MgO NPs. The value of field enhancement factor (β) also increases from 2.814×103 to 9.823×103.


RSC Advances ◽  
2015 ◽  
Vol 5 (7) ◽  
pp. 5372-5378 ◽  
Author(s):  
Satyajit Ratha ◽  
Ruchita T. Khare ◽  
Mahendra A. More ◽  
Ranjit Thapa ◽  
Dattatray J. Late ◽  
...  

Spinel ZnCo2O4 microflowers were synthesized by a facile route and their field emission properties were studied in detail. They showed intriguing Field emission performance in terms of good field-enhancement factor and stability.


2020 ◽  
Vol 90 (11) ◽  
pp. 1931
Author(s):  
И.Д. Евсиков ◽  
С.В. Митько ◽  
П.Ю. Глаголев ◽  
Н.А. Дюжев ◽  
Г.Д. Демин

Using atomic force microscopy (AFM), we experimentally examined the features of field-electron emission from a single point-type silicon cathode into a quasi-vacuum (air) medium. In the non-contact AFM operating mode, the current – voltage characteristics (CVCs) of a single cathode with a nanometer radius of curvature of the tip were measured at distances of 10 nm and 20 nm between the cathode tip and the top of the measuring probe. The electric field distribution was simulated both on the surface of the tip of a single cathode and on the surface of the tips of individual cathodes within the array, based on which a theoretical estimate of the field enhancement factor as a function of the cathode-probe distance was made. The field-enhancement factor calculated from the experimental CVCs in the Fowler-Nordheim coordinates is several orders of magnitude higher than its value obtained from theoretical calculations. Such a mismatch between the experimental data and the simulation results indicates the need to take into account additional quantum-size effects, which play an important role in the formation of the field-electron emission current in the nanoscale gap. In particular, deformation of the silicon emitter tip can occur at this scale due to the penetration of a strong electric field into its surface region, which, in turn, causes the distortion of the potential barrier at the interface with the quasi-vacuum medium.


2005 ◽  
Vol 484 (1-2) ◽  
pp. 379-381 ◽  
Author(s):  
Guang Yuan ◽  
Hang Song ◽  
Yixin Jin ◽  
Hidenori Mimura ◽  
Kuniyoshi Yokoo

2009 ◽  
Vol 109 (4) ◽  
pp. 373-378 ◽  
Author(s):  
Evgeny G. Pogorelov ◽  
Alexander I. Zhbanov ◽  
Yia-Chung Chang

2020 ◽  
Vol 15 (2) ◽  
pp. 276-283 ◽  
Author(s):  
Junqi Xu ◽  
Yanrui Wang ◽  
Wenjie Wang ◽  
Zijun Xu ◽  
Yonglei Jia ◽  
...  

Large-scale PrB6 nanowires were fabricated by an effective, catalyst-free, and a simple low-pressure chemical vapor deposition (LPCVD) process. These nanowires, characterized in detail by various analytical instruments, demonstrated the large aspect ratio and high single-crystalline grown along the [001] crystal direction perpendicular to the (001) crystal plane. The field electron emission equipment tests manifest that the asgrown PrB6 products have a low turn-on field (Eto, 2.32 V/μm), a threshold field (Ethr, 4.28 V/μm), a high field enhancement factor (β, 2336), as well as a stable current-density (J) of field-emission. The relationships of the field electron emission parameters, such as J, Eto, and β versus cathode gap (d), have been established when d is increased from 500 μm to 800 μm. The outstanding properties suggest that the PrB6 products may be promising emitters in the cold-field-emission cathode application.


2016 ◽  
Vol 1 (4) ◽  
pp. 304-312 ◽  
Author(s):  
M. T. Cole ◽  
R. J. Parmee ◽  
A. Kumar ◽  
C. M. Collins ◽  
M. H. Kang ◽  
...  

Here we report on a straightforward and rapid means of enhancing the field electron emission performance of nascent vertically aligned multi-walled carbon nanotubes by introducing a polar zwitterionic conjugated polyelectrolyte adlayer at the vacuum–emitter interface.


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