A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode

2019 ◽  
Vol 7 (44) ◽  
pp. 13920-13929 ◽  
Author(s):  
Zeng Liu ◽  
Xia Wang ◽  
Yuanyuan Liu ◽  
Daoyou Guo ◽  
Shan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Blind Detection ◽  
Solar Blind ◽  
Schottky Photodiode

A high-performance and easily fabricated Ni/β-Ga2O3 Schottky photodiode was developed for ultraviolet solar-blind detection.

High-performance dual-mode solar-blind sensor of a Si-doped β-Ga2O3 trench Schottky photodiode

2021 ◽  
pp. 1-1
Author(s):  
Wei-Yu Jiang ◽  
Zeng Liu ◽  
Shan Li ◽  
Zu-Yong Yan ◽  
Cheng-Ling Lu ◽  
...  
Keyword(s):  
High Performance ◽  
Dual Mode ◽  
Solar Blind ◽  
Si Doped ◽  
Schottky Photodiode

High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

2003 ◽  
Vol 798 ◽  
Author(s):  
Jean-Yves DUBOZ ◽  
Jean-Luc Reverchon ◽  
Mauro Mosca ◽  
Nicolas Grandjean ◽  
Franck Omnes
Keyword(s):  
High Performance ◽  
Blind Detection ◽  
Back Side ◽  
Detector Performance ◽  
Rejection Ratio ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Key Factor ◽  
Metal Organic ◽  
Dark Currents

ABSTRACTSolar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep cut off limited by alloy fluctuations have been obtained. A noise equivalent power below 10 fW is obtained in MSM detectors.

Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

2020 ◽  
Vol 8 (15) ◽  
pp. 5071-5081 ◽  
Author(s):  
Zeng Liu ◽  
Shan Li ◽  
Zuyong Yan ◽  
Yuanyuan Liu ◽  
Yusong Zhi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Blind Detection ◽  
Dual Mode ◽  
Zero Bias ◽  
Solar Blind

A dual-mode, sensitive β-Ga2O3 MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 1011 Jones.

scholarly journals High-Performance Solar-Blind AlGaN Schottky Photodiodes

2003 ◽  
Vol 8 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
High Speed ◽  
High Performance ◽  
Reverse Bias ◽  
Blind Detection ◽  
Spectral Responsivity ◽  
Noise Floor ◽  
Current Voltage ◽  
Solar Blind ◽  
Dark Currents ◽  
Device Responsivity

High-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN hetero-structures using a microwave-compatible fabrication process. Current-voltage, spectral responsivity, noise, and high-speed characteristics of the detectors were measured and analyzed. Dark currents lower than 1 pA at bias voltages as high as 30 V were obtained. True solar-blind detection was achieved with a cut-off wavelength lower than 266 nm. A peak device responsivity of 78 mA/W at 250 nm was measured under 15 V reverse bias. A visible rejection of more than 4 orders of magnitude was observed. The solar-blind photodiodes exhibited noise densities below the measurement setup noise floor of 3×10−29 A2/Hz around 10 KHz. High-speed measurements at the solar-blind wavelength of 267 nm resulted in 3-dB bandwidths as high as 870 MHz.

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si

2001 ◽  
Vol 188 (1) ◽  
pp. 325-328 ◽  
Author(s):  
J.-Y. Duboz ◽  
J.-L. Reverchon ◽  
D. Adam ◽  
B. Damilano ◽  
F. Semond ◽  
...  
Keyword(s):  
High Performance ◽  
Solar Blind

scholarly journals The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 631
Author(s):  
Wei-Lun Huang ◽  
Sheng-Po Chang ◽  
Cheng-Hao Li ◽  
Shoou-Jinn Chang
Keyword(s):  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Wide Bandgap ◽  
Visible Light Region ◽  
Current Ratio ◽  
Rejection Ratio ◽  
Light Region ◽  
Sputtering Power ◽  
Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

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