Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

2020 ◽  
Vol 8 (15) ◽  
pp. 5071-5081 ◽  
Author(s):  
Zeng Liu ◽  
Shan Li ◽  
Zuyong Yan ◽  
Yuanyuan Liu ◽  
Yusong Zhi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Blind Detection ◽  
Dual Mode ◽  
Zero Bias ◽  
Solar Blind

A dual-mode, sensitive β-Ga2O3 MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 1011 Jones.

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency

2019 ◽  
Vol 31 (15) ◽  
pp. 1237-1240 ◽  
Author(s):  
Anisha Kalra ◽  
Shashwat Rathkanthiwar ◽  
Rangarajan Muralidharan ◽  
Srinivasan Raghavan ◽  
Digbijoy N. Nath
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Zero Bias ◽  
Solar Blind

High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

Nanoscale ◽  
2016 ◽  
Vol 8 (39) ◽  
pp. 17113-17121 ◽  
Author(s):  
S.-Y. Kim ◽  
K. Kim ◽  
Y. H. Hwang ◽  
J. Park ◽  
J. Jang ◽  
...  
Keyword(s):  
High Resolution ◽  
Metal Oxide ◽  
Inkjet Printing ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

Nanoscale ◽  
2013 ◽  
Vol 5 (15) ◽  
pp. 6867 ◽  
Author(s):  
R. S. Chen ◽  
W. C. Wang ◽  
M. L. Lu ◽  
Y. F. Chen ◽  
H. C. Lin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
Semiconductor Nanowires ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Dependence

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

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