Direct quantitative imaging of the writing stage in a photosensitive azopolymer by digital holography

Soft Matter ◽  
2019 ◽  
Vol 15 (39) ◽  
pp. 7809-7813 ◽  
Author(s):  
V. Pagliarulo ◽  
A. Calabuig ◽  
S. Grilli ◽  
P. Ferraro
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Surface Relief ◽  
Digital Holography ◽  
Light Exposure ◽  
Quantitative Imaging ◽  
Continuous Light ◽  
Full Field ◽  
Surface Relief Grating

In this paper, we demonstrated that the gradual formation of a surface relief grating (SRG) in azopolymer thin films under continuous light exposure could be directly observed in situ and in real-time, allowing full-field characterization.

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

scholarly journals Quantitative In-Situ Nanoindentation of Thin Films in a Transmission Electron Microscope

2001 ◽  
Vol 7 (S2) ◽  
pp. 912-913
Author(s):  
A.M. Minorl ◽  
E.A. Stach ◽  
J.W. Morris
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Real Time ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Indenter ◽  
Force Calibration

A unique in situ nanoindentation stage has been built and developed at the National Center for Electron Microscopy in Berkeley, CA. By using piezoceramic actuators to finely position a 3-sided, boron-doped diamond indenter, we are able to image in real time the nanoindentation induced deformation of thin films. Recent work has included the force-calibration of the indenter, using silicon cantilevers to establish a relationship between the voltage applied to the piezoactuators, the displacement of the diamond tip, and the force generated.In this work, we present real time, in situ TEM observations of the plastic deformation of Al thin films grown on top of lithographically-prepared silicon substrates. The in situ nanoindentations require a unique sample geometry (see Figure 1) in which the indenter approaches the specimen normal to the electron beam. in order to meet this requirement, special wedge-shaped silicon samples were designed and microfabricated so that the tip of the wedge is sharp enough to be electron transparent.

Real-Time Thermo-Mechanical and Adhesive Property Evaluation of Thin Films and Multi-Layers

1994 ◽  
Vol 338 ◽  
Author(s):  
John A. Rogers ◽  
K. A. Nelson
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Elastic Moduli ◽  
Adhesive Property ◽  
Adhesive Properties ◽  
Property Evaluation ◽  
Spot Check ◽  
Layer Structures ◽  
Time Evaluation

ABSTRACTWe describe an experimental method useful for in-situ real-time evaluation of viscoelastic, thermal and adhesive properties of thin films and multi-layer structures. We demonstrate how the technique is used to quantify the elastic moduli, and in-plane thermal diffusivity. We also show how it can be used to “spot check” for dis-bonds and to generate dis-bond “maps”.

Real-time x-ray scattering study of sputter-deposited LaNiO3 thin films on Si substrates

1999 ◽  
Vol 569 ◽  
Author(s):  
Hsin-Yi Lee ◽  
Chih-Hao Lee ◽  
Keng S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Sputtering Deposition ◽  
X Ray ◽  
Si Substrates ◽  
Plane Normal ◽  
Integrated Intensities

ABSTRACTReal-time x-ray reflectivity and diffraction measurements under in-situ sputtering deposition conditions were performed to study the crystallization behavior of LaNiO3thin films on Si substrate. We found that an amorphous layer of 60 Å was grown in the first 6 min of the deposition and subsequently a polycrystalline overlayer was developed as observed from the in-situ x-ray reflectivity curves and diffraction patterns. Polycrystalline columnar textures of (110) and (100) were grown on the top of this amorphous film. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that the ability of (100)-texturization enhanced with increasing film thickness over a certain critical value.

scholarly journals Surface relief grating growth in thin films of mexylaminotriazine-functionalized glass-forming azobenzene derivatives

2015 ◽  
Vol 39 (12) ◽  
pp. 9162-9170 ◽  
Author(s):  
Othmane R. Bennani ◽  
Tayel A. Al-Hujran ◽  
Jean-Michel Nunzi ◽  
Ribal Georges Sabat ◽  
Olivier Lebel
Keyword(s):  
Thin Films ◽  
Surface Relief ◽  
Surface Relief Grating ◽  
Glass Forming ◽  
Azobenzene Derivatives

A series of glass-forming azobenzene derivatives with varying absorption ranges were synthesized, and their photomechanical properties were compared.

scholarly journals Digital holographic microscopy for real-time observation of surface-relief grating formation on azobenzene-containing films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Heikki Rekola ◽  
Alex Berdin ◽  
Chiara Fedele ◽  
Matti Virkki ◽  
Arri Priimagi
Keyword(s):  
Real Time ◽  
Surface Relief ◽  
Digital Holographic Microscopy ◽  
In Situ Observation ◽  
Full Potential ◽  
Surface Relief Grating ◽  
Structural Colors ◽  
Formation Dynamics ◽  
Holographic Microscopy ◽  
Grating Formation

AbstractLight-induced surface structuring of azobenzene-containing films allows for creation of complex surface relief patterns with varying heights, patterns which would be difficult to create using conventional lithography tools. In order to realize the full potential of these patternable surfaces, understanding their formation dynamics and response to different types of light fields is crucial. In the present work we introduce digital holographic microscopy (DHM) for real time, in-situ observation of surface-relief grating (SRG) formation on azobenzene-containing films. This instrument allows us to measure the surface topography of films while illuminating them with two individually controlled laser beams for creating periodically varying patterns. By utilizing the information of the grating formation dynamics, we combine multiple grating patterns to create pixels with wide gamut structural colors as well as blazed grating structures on the film surface. As long as the material behaviour is linear, any Fourier optical surface can be created utilizing this multiple patterning approach. The DHM instrument presented here has the potential for creating complex 3D surface reliefs with nanometric precision.

Influence of internal stress in optical thin films on their failure modes assessed by in situ real-time scratch analysis

2017 ◽  
Vol 109 ◽  
pp. 355-366 ◽  
Author(s):  
Thomas Poirié ◽  
Thomas Schmitt ◽  
Etienne Bousser ◽  
Ludvik Martinu ◽  
Jolanta-Ewa Klemberg-Sapieha
Keyword(s):  
Thin Films ◽  
Internal Stress ◽  
Real Time ◽  
Failure Modes

Real-Time Investigations on the Formation of Cu(In,Ga)Se2 While Annealing Precursors Produced with a Combination of Sputtering and Thermal Evaporation

2007 ◽  
Vol 1012 ◽  
Author(s):  
Stefan Jost ◽  
Frank Hergert ◽  
Rainer Hock ◽  
Michael Purwins
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Thermal Evaporation ◽  
Indium Selenide ◽  
Transfer Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Precursor Phase ◽  
Elemental Layer

AbstractWe have investigated the formation of Cu(In,Ga)Se2 thin films by real-time X-ray diffraction (XRD) experiments while annealing differently deposited and composed stacked elemental layer (SEL) precursors.The in-situ measurements during the selenization of bi-layered Cu/In precursors reveal, that the semiconductor formation process is similar for precursors with thermally evaporated or sputtered indium. In both cases, the formation of binary copper and indium selenides is observed at temperatures around the melting point of selenium. After subsequent selenium transfer reactions, the chalcopyrite CuInSe2 is formed from the educt phases Cu2-xSe and InSe.The addition of gallium leads to the formation of the intermetallic precursor phase Cu9Ga4, which reduces the overall amount of copper and gallium selenides at process temperatures above 500 K. This causes an ongoing selenization in the indium selenium subsystem, which results in the formation of CuInSe2 from the educt phases Cu2-xSe and the selenium richest indium selenide g-In2Se3.

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