scholarly journals Interface depended electronic and magnetic properties of vertical CrI3/WSe2 heterostructures

RSC Advances ◽  
2019 ◽  
Vol 9 (26) ◽  
pp. 14766-14771 ◽  
Author(s):  
Mei Ge ◽  
Yan Su ◽  
Han Wang ◽  
Guohui Yang ◽  
Junfeng Zhang

The out-plane easy axis is tuned into in-plane in both CrI3/WSe2 and WSe2/CrI3/WSe2 vertical heterostructures.

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22258-22267
Author(s):  
L. Fernandez ◽  
M. Blanco-Rey ◽  
R. Castrillo-Bodero ◽  
M. Ilyn ◽  
K. Ali ◽  
...  

HoAu2, YbAu2 and GdAu2 surface compounds are investigated by electron spectroscopies, microscopy and theory. Yb in YbAu2 reveals a mixed valence character while Gd and Ho are trivalent. HoAu2 is ferromagnetic with an out-of-plane easy axis and TC = 22 K.


2016 ◽  
Vol 30 (36) ◽  
pp. 1650419 ◽  
Author(s):  
Yunliang Yue

First-principles calculations are performed to study the electronic and magnetic properties of monolayer MnS2. Based on the electronic structure, a half-metallic state is predicted for monolayer MnS2. The magnetic moment is 3.0 [Formula: see text] per formula unit, and the main contribution is localized at the transition metal site Mn with a local moment of 3.733 [Formula: see text]. The magnetic anisotropy energy (MAE) is 0.056 meV per formula unit with an easy axis perpendicular to the plane, and it indicates that monolayer MnS2 belongs to the category of Ising magnets. The positive MAE of nanosheets mainly stems from the area around [Formula: see text] in the reciprocal space. To find the microscopic origin, we take the method of the second-order spin orbit coupling. The occupied spin-up dz2 state and the unoccupied spin-down dyz states in the [Formula: see text] point through the [Formula: see text] operator make positive contributions to the MAE.


2019 ◽  
Vol 109 ◽  
pp. 93-100 ◽  
Author(s):  
Xu Zhao ◽  
Qingqing Yang ◽  
Hui Zhang ◽  
Yonghui Gao ◽  
Haiyang Wang ◽  
...  

2021 ◽  
Vol 129 (15) ◽  
pp. 155104
Author(s):  
Qian Wang ◽  
Nannan Han ◽  
Xuyang Zhang ◽  
Chenhui Zhang ◽  
Xixiang Zhang ◽  
...  

Author(s):  
Prayoonsak Pluengphon ◽  
Prutthipong Tsuppayakorn-aek ◽  
Burapat Inceesungvorn ◽  
Udomsilp Pinsook ◽  
Thiti Bovornratanaraks

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18371-18380
Author(s):  
Erik Bhekti Yutomo ◽  
Fatimah Arofiati Noor ◽  
Toto Winata

The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.


2020 ◽  
Vol 4 (10) ◽  
Author(s):  
Dietmar Czubak ◽  
Samuel Gaucher ◽  
Lars Oppermann ◽  
Jens Herfort ◽  
Klaus Zollner ◽  
...  

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