scholarly journals Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22258-22267
Author(s):  
L. Fernandez ◽  
M. Blanco-Rey ◽  
R. Castrillo-Bodero ◽  
M. Ilyn ◽  
K. Ali ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Rare Earth ◽  
Easy Axis ◽  
Mixed Valence ◽  
Electronic And Magnetic Properties ◽  
Surface Compounds ◽  
Out Of Plane

HoAu2, YbAu2 and GdAu2 surface compounds are investigated by electron spectroscopies, microscopy and theory. Yb in YbAu2 reveals a mixed valence character while Gd and Ho are trivalent. HoAu2 is ferromagnetic with an out-of-plane easy axis and TC = 22 K.

scholarly journals Correction: Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds

Nanoscale ◽  
2021 ◽  
Author(s):  
L. Fernandez ◽  
M. Blanco-Rey ◽  
R. Castrillo-Bodero ◽  
M. Ilyn ◽  
K. Ali ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Rare Earth ◽  
Electronic And Magnetic Properties ◽  
Surface Compounds

Correction for ‘Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds’ by L. Fernandez et al., Nanoscale, 2020, 12, 22258–22267, DOI: 10.1039/D0NR04964F.

Mössbauer effect investigations of the electronic and magnetic properties of rare earth metal and intermetallic hydrides

1979 ◽  
Vol 50 (B11) ◽  
pp. 7682 ◽  
Author(s):  
B. D. Dunlap ◽  
G. K. Shenoy ◽  
J. M. Friedt ◽  
P. J. Viccaro ◽  
D. Niarchos ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Rare Earth ◽  
Rare Earth Metal ◽  
Earth Metal ◽  
Electronic And Magnetic Properties

scholarly journals Interface depended electronic and magnetic properties of vertical CrI3/WSe2 heterostructures

RSC Advances ◽  
2019 ◽  
Vol 9 (26) ◽  
pp. 14766-14771 ◽  
Author(s):  
Mei Ge ◽  
Yan Su ◽  
Han Wang ◽  
Guohui Yang ◽  
Junfeng Zhang
Keyword(s):  
Magnetic Properties ◽  
Easy Axis ◽  
Electronic And Magnetic Properties

The out-plane easy axis is tuned into in-plane in both CrI3/WSe2 and WSe2/CrI3/WSe2 vertical heterostructures.

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

2021 ◽  
Author(s):  
◽  
Simon Granville
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Rare Earth ◽  
Diluted Magnetic Semiconductor ◽  
Experimental Studies ◽  
Magnetic Semiconductor ◽  
Electronic And Magnetic Properties ◽  
Rare Earth Nitrides ◽  
Diluted Magnetic ◽  
Reaction With Water

<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>

Comparative Study in Magnetic Properties of Ni/Co/Pt(111) and Co/Ni/Pt(111)

2007 ◽  
Vol 998 ◽  
Author(s):  
Yao-Jung Chen ◽  
H. Y. Ho ◽  
C. S. Shern
Keyword(s):  
Magnetic Properties ◽  
Easy Axis ◽  
Annealing Temperature ◽  
Surface Composition ◽  
Spin Reorientation ◽  
Layer By Layer ◽  
Island Growth ◽  
Perpendicular Magnetization ◽  
Growth Modes ◽  
Out Of Plane

ABSTRACTMagneto-optical Kerr effect (MOKE), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES) were used to study the magnetic properties and the growth modes of thin Ni films on 1ML Co/Pt(111) and Co /1 ML Ni/Pt(111) at room temperature (RT). Because the lattice constants of Co and Ni are only slightly different, both growth modes have similar behavior. They grow 2 ML in layer-by-layer mode then turn to 3-D island growth. On the contrary, the magnetic properties have great difference. For Ni/1 ML Co/Pt(111), the easy axis of magnetization changed from the canted state to the out-of-plane direction when the Co buffer layer was inserted into Ni/Pt(111). The perpendicular magnetization persisted to 24 ML of Co thin films. This spin reorientation transition can be understood by the change of effective interface magnetic anisotropy. For Co/1 ML Ni/Pt(111), Kerr signal was not observed when the thickness of Co film was below 3 ML, and the easy axis of the magnetization was in-plane when the thickness of Co was greater than 3 ML at RT. The polar Kerr signal appeared after the sample was annealed at 450 K for 1 ML of Co. Further studies in the magnetic properties and surface composition of 3 ML Co/1 ML Ni/Pt(111) during an annealing process showed that the out-of-plane magnetization enhanced significantly when Co and Ni atoms diffused into the Pt substrate.The Curie temperature (TC) of both systems can be adjusted by changing the annealing temperature. Measuring at RT, TC decreased when the annealing temperature rose. However, the change rates were different in these two mirror systems. The possible mechanism of the evolution in the magnetic property with the interface structure was comparatively discussed.

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