Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers
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We developed a 1.0 nm thick aluminum oxide (Al2O3) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs).
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2018 ◽
Vol 49
(1)
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pp. 1636-1639
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2018 ◽
Vol 10
(18)
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pp. 15803-15811
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2015 ◽
Vol 36
(4)
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pp. 369-371
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2015 ◽
Vol 11
(9)
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pp. 753-758
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2015 ◽
Vol 85
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pp. 59-66
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