Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching
Step-bunching during epitaxy induces inhomogeneous incorporation of a Si dopant into GaN at the nanometer scale as revealed by electrochemical etching.
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2012 ◽
Vol 197
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pp. 351-355
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Investigation of Electrochemical Nanostructuring with Ultrashort Pulses by Using Nanoscale Electrode
2019 ◽
Vol 15
(3)
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pp. 279-288
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1992 ◽
Vol 50
(1)
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pp. 426-427
1994 ◽
Vol 52
◽
pp. 886-887
1990 ◽
Vol 48
(1)
◽
pp. 306-307
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