pH-Modulated memristive behavior based on an edible garlic-constructed bio-electronic device

2019 ◽  
Vol 43 (24) ◽  
pp. 9634-9640 ◽  
Author(s):  
Shuangsuo Mao ◽  
Bai Sun ◽  
Tian Yu ◽  
Weiwei Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Electronic Device ◽  
Memory Device ◽  
Sensor Applications ◽  
Memristive Behavior ◽  
New Type ◽  
Behavior Based

A new type of memristive memory device with an edible garlic-constructed Ag/garlic/fluorine-doped SnO2(FTO) structure for analog neuromorphic sensor applications was designed.

GYROTON – A NEW TYPE OF ELECTRONIC DEVICE ON THE BASIS OF CORRUGATED RESONATOR

2017 ◽  
Vol 76 (20) ◽  
pp. 1777-1795
Author(s):  
S. V. Kolosov ◽  
А. А. Kuraev ◽  
I. Ye. Zaytseva
Keyword(s):  
Electronic Device ◽  
New Type

High Power Inverter Circuit from GTO to IGCT and its Application on AC Driving Locomotive

2011 ◽  
Vol 354-355 ◽  
pp. 1394-1399
Author(s):  
Su Rong Qu ◽  
Zhong Yang Zhang
Keyword(s):  
High Power ◽  
Electronic Device ◽  
Superior Performance ◽  
Power Electronic ◽  
Large Power ◽  
Ac Drive ◽  
New Type ◽  
Inverter Circuit ◽  
Type Power ◽  
Paper Author

IGCT is a kind of new type power electronic device which developed from GTO and IGBT . In this paper, Author based on analysis of the internal structure of GTO, shows how GTO development IGCT through technical methods.Through simulation of its off and on performance, the work curve and comparing results of the two devices are given. Then on two components of the inverter circuits are analyzed and compared. Thinking in large power AC drive locomotive, IGCT inverter is greatly simplifier than GTO inverter circuit, and superior performance,it will become the main converter for AC driving locomotive.

Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots

2019 ◽  
Vol 12 (01) ◽  
pp. 1850093 ◽  
Author(s):  
Hong Wang ◽  
Bangfu Ding ◽  
Xiaoyan Tian ◽  
Rui Zhao ◽  
Yuanyuan Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Charge Trapping ◽  
Memory Device ◽  
Wide Bandgap ◽  
Photoelectron Spectra ◽  
Promising Candidate ◽  
New Type ◽  
Charge Trapping Memory ◽  
Graphene Oxide Quantum Dots

In this work, graphene oxide quantum dots (GOQDs) are introduced as an electron-trapped layer in Pd/Zr[Formula: see text]Hf[Formula: see text]O2 (ZHO)/SiO2/Si memory device. This structure possessed longer than 104 s retention capability, a low operation voltage around [Formula: see text][Formula: see text]V and 2.61[Formula: see text]V storage windows. GOQDs contained carbon–carbon and carbon–oxygen single/double bonds based on the analysis of C-1[Formula: see text] and O-1[Formula: see text] X-ray photoelectron spectra. It is proposed that the GOQDs’ wide bandgap with many oxygen-containing functional groups favors charge capture to a greater extent. This new type of charge-trapping memory can be a promising candidate for wide application to storing information with non-volatility in the big data era.

scholarly journals Negative Differential Resistance in Bidirectional Threshold Switching of Ag/HfOx/Pt Device

2020 ◽  
Author(s):  
zhiguo jiang ◽  
Dongliang Wang ◽  
Yan Li ◽  
Yong Zhang ◽  
Xinman Chen
Keyword(s):  
Negative Differential Resistance ◽  
Electronic Device ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Memory ◽  
Relaxation Equation ◽  
Relaxation Time Constant ◽  
Memory Switching ◽  
Threshold Switching ◽  
Dynamic Conductance

Abstract In this work, the dependence of negative differential resistance (NDR) on compliance current (Icc) was investigated based on Ag/HfOx/Pt resistive memory device. Tunable conversion from bidirectional threshold switching (TS) to memory switching (MS) were achieved through enhancing Icc. NDR can be observed in TS as Icc is below 800μA but vanishes in MS. The switching voltages and readout windows of TS evolve with Icc. Furthermore, the dynamic conductance (dI/dV) as a function of time in NDR can be well illustrated by capacitor-like relaxation equation, and the relaxation time constant is significantly dependent on Icc. These phenomena were elucidated from viewpoint of nanofilament evolution controlled by Icc as well as nanocapacitor effects originated from nanofilament gap. The Icc-dependent NDR as well as conversion between TS and MS on Ag/HfOx/Pt resistive memory device indicates its potential application as a multifunctional electronic device.

Observation of a new type of giant magnetoresistance with possible sensor applications

1998 ◽  
Vol 51 (1-3) ◽  
pp. 216-218 ◽  
Author(s):  
N Overend ◽  
A Nogaret ◽  
B.L Gallagher ◽  
P.C Main ◽  
M Henini ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Sensor Applications ◽  
New Type

Memristive Behavior Based on Ba-Doped SrTiO 3 Films

2017 ◽  
Vol 34 (3) ◽  
pp. 038502 ◽  
Author(s):  
Gang Dou ◽  
Yang Yu ◽  
Mei Guo ◽  
Yu-Man Zhang ◽  
Zhao Sun ◽  
...  
Keyword(s):  
Memristive Behavior ◽  
Behavior Based

New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

scholarly journals New type electronic device – gyroton on a corrugated resonator

2017 ◽  
Vol 22 (3) ◽  
pp. 37-46
Author(s):  
S. V. Kolosov ◽  
◽  
A. A. Kuraev ◽  
I. E. Zaitseva
Keyword(s):  
Electronic Device ◽  
New Type
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