scholarly journals Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

2020 ◽  
Vol 2 (1) ◽  
pp. 401-407
Author(s):  
Pei-Chieh Chiu ◽  
Sheng-Hsiung Yang
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Light Emitting ◽  
Hole Transporting

A new additive BYK-P105 was blended with PEDOT:PSS as the HTL to improve the device performance of QLEDs.

scholarly journals Polymeric Hole Transport Materials for Red CsPbI3 Perovskite Quantum-Dot Light-Emitting Diodes

Polymers ◽  
2021 ◽  
Vol 13 (6) ◽  
pp. 896
Author(s):  
Zong-Liang Tseng ◽  
Shih-Hung Lin ◽  
Jian-Fu Tang ◽  
Yu-Ching Huang ◽  
Hsiang-Chih Cheng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Comparative Study ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Device Performance ◽  
Light Emitting ◽  
Device Structures ◽  
Hole Transporting ◽  
Hole Transporting Materials

In this study, the performances of red CsPbI3-based all-inorganic perovskite quantum-dot light-emitting diodes (IPQLEDs) employing polymeric crystalline Poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(9-vinycarbazole) (PVK), Poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine (Poly-TPD) and 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) as the hole transporting layers (HTLs) have been demonstrated. The purpose of this work is an attempt to promote the development of device structures and hole transporting materials for the CsPbI3-based IPQLEDs via a comparative study of different HTLs. A full-coverage quantum dot (QD) film without the aggregation can be obtained by coating it with VB-FNPD, and thus, the best external quantum efficiency (EQE) of 7.28% was achieved in the VB-FNPD device. We also reported a standing method to further improve the degree of VB-FNPD polymerization, resulting in the improved device performance, with the EQE of 8.64%.

An Efficient Hole Transporting Polymer for Quantum Dot Light‐Emitting Diodes

2021 ◽  
pp. 2100731
Author(s):  
Wenhai Wu ◽  
Zhao Chen ◽  
Yunfeng Zhan ◽  
Bochen Liu ◽  
Weidong Song ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Hole Transporting

scholarly journals Organic–inorganic hybrid perovskite quantum dot light-emitting diodes using a graphene electrode and modified PEDOT:PSS

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20931-20940 ◽  
Author(s):  
Qing Zhang ◽  
Hongtao Yu ◽  
Ziwei Liu ◽  
Yao Lu ◽  
Danqing Ye ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Graphene Electrode ◽  
Hybrid Perovskite

A graphene electrode together with modified PEDOT:PSS was first applied into perovskite quantum dot light-emitting diodes to improve the device performance.

High-efficiency quantum dot light-emitting diodes employing lithium salt doped poly(9-vinlycarbazole) as a hole-transporting layer

2017 ◽  
Vol 5 (22) ◽  
pp. 5372-5377 ◽  
Author(s):  
Ying-Li Shi ◽  
Feng Liang ◽  
Yun Hu ◽  
Xue-Dong Wang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Lithium Salt ◽  
Light Emitting ◽  
Hole Transporting

The maximum external quantum efficiency of the device is 11.46% using PVK doped Li-TFSI as the hole-transporting layer.

scholarly journals Position Effects of Metal Nanoparticles on the Performance of Perovskite Light-Emitting Diodes

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 993
Author(s):  
Chen-Min Yang ◽  
Fang-Chung Chen
Keyword(s):  
Metal Nanoparticles ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Perovskite Layer ◽  
Position Effects ◽  
Au Nps ◽  
Light Emitting ◽  
Hole Transporting ◽  
Near Future ◽  
Luminance Efficiency

Metal nanoparticles have been widely used for improving the efficiencies of many optoelectronic devices. Herein, position effects of gold nanoparticles (Au NPs) on the performance of perovskite light-emitting diodes (PeLEDs) are investigated. Amphiphilic Au NPs are synthesized so that they can be incorporated into different layers of the PeLEDs to enhance device efficiencies. The photoluminescent (PL) studies indicate apparent position effects; the strongest PL intensity occurs when the NPs are directly blended with the light-emitting perovskite layer. In contrast, the PeLEDs exhibit the highest luminance efficiency while the Au NPs are placed in the hole-transporting layer. The direct blending of the NPs in the perovskite layer might affect the electrical properties, resulting in inferior device performance. The results reported herein can help to understand the enhancing mechanism of the PeLEDs and may also lead to even better efficiencies in the near future.

Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7281-7290 ◽  
Author(s):  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Copper Nickel ◽  
Hole Transporting

Herein, we report all solution-processed green quantum-dot light-emitting diodes (G-QLEDs) by introducing a perfluorinated ionomer (PFI, Nafion 117) into quantum dots (QDs) to improve hole injection.

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