Quantum Dot Light-Emitting Diodes in the Visible Region: Energy Level of Ligands and Their Role in Controlling Interdot Spacing and Device Performance

2013 ◽  
Vol 117 (48) ◽  
pp. 25390-25396 ◽  
Author(s):  
Saikat Bhaumik ◽  
Amlan J. Pal
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Visible Region ◽  
Device Performance ◽  
Light Emitting

scholarly journals Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

2020 ◽  
Vol 2 (1) ◽  
pp. 401-407
Author(s):  
Pei-Chieh Chiu ◽  
Sheng-Hsiung Yang
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Light Emitting ◽  
Hole Transporting

A new additive BYK-P105 was blended with PEDOT:PSS as the HTL to improve the device performance of QLEDs.

scholarly journals Organic–inorganic hybrid perovskite quantum dot light-emitting diodes using a graphene electrode and modified PEDOT:PSS

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20931-20940 ◽  
Author(s):  
Qing Zhang ◽  
Hongtao Yu ◽  
Ziwei Liu ◽  
Yao Lu ◽  
Danqing Ye ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Graphene Electrode ◽  
Hybrid Perovskite

A graphene electrode together with modified PEDOT:PSS was first applied into perovskite quantum dot light-emitting diodes to improve the device performance.

Enhanced device performance of quantum-dot light-emitting diodes via 2,2′-Bipyridyl ligand exchange

2021 ◽  
pp. 106326
Author(s):  
Jeong-Yeol Yoo ◽  
Woon Ho Jung ◽  
Chil Won Lee ◽  
Byung Doo Chin ◽  
Jong-Gyu Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Light Emitting

scholarly journals Sequential Improvement from Cosolvents Ink Formulation to Vacuum Annealing for Ink-Jet Printed Quantum-Dot Light-Emitting Diodes

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4754
Author(s):  
Young Joon Han ◽  
Do Yeob Kim ◽  
Kunsik An ◽  
Kyung-Tae Kang ◽  
Byeong-Kwon Ju ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Vacuum Annealing ◽  
Device Performance ◽  
Ohnesorge Number ◽  
Emission Layer ◽  
Light Emitting ◽  
Ink Jet ◽  
Jet Printing

Optimization of ink-jet printing conditions of quantum-dot (QD) ink by cosolvent process and improvement of quantum-dot light-emitting diodes (QLEDs) characteristics assisted by vacuum annealing were analyzed in this research. A cosolvent process of hexane and ortho-dichlorobenzene (oDCB) was optimized at the ratio of 1:2, and ink-jetting properties were analyzed using the Ohnesorge number based on the parameters of viscosity and surface tension. However, we found that these cosolvents systems cause an increase in the boiling point and a decrease in the vapor pressure, which influence the annealing characteristics of the QD emission layer (EML). Therefore, we investigated QLEDs’ performance depending on the annealing condition for ink-jet printed QD EML prepared using cosolvents systems of hexane and oDCB. We enhanced the quality of QD EML and device performance of QLEDs by a vacuum annealing process, which was used to prevent exposure to moisture and oxygen and to promote effective evaporation of solvent in QD EML. As a result, the characteristics of QLEDs formed using ink-jet printed QD EML annealed under vacuum environment increased luminescence (L), current efficiency (CE), external quantum efficiency (EQE), and lifetime (LT50) by 30.51%, 33.7%, 21.70%, and 181.97%, respectively, compared to QLEDs annealed under air environment.

scholarly journals Polymeric Hole Transport Materials for Red CsPbI3 Perovskite Quantum-Dot Light-Emitting Diodes

Polymers ◽  
2021 ◽  
Vol 13 (6) ◽  
pp. 896
Author(s):  
Zong-Liang Tseng ◽  
Shih-Hung Lin ◽  
Jian-Fu Tang ◽  
Yu-Ching Huang ◽  
Hsiang-Chih Cheng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Comparative Study ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Device Performance ◽  
Light Emitting ◽  
Device Structures ◽  
Hole Transporting ◽  
Hole Transporting Materials

In this study, the performances of red CsPbI3-based all-inorganic perovskite quantum-dot light-emitting diodes (IPQLEDs) employing polymeric crystalline Poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(9-vinycarbazole) (PVK), Poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine (Poly-TPD) and 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) as the hole transporting layers (HTLs) have been demonstrated. The purpose of this work is an attempt to promote the development of device structures and hole transporting materials for the CsPbI3-based IPQLEDs via a comparative study of different HTLs. A full-coverage quantum dot (QD) film without the aggregation can be obtained by coating it with VB-FNPD, and thus, the best external quantum efficiency (EQE) of 7.28% was achieved in the VB-FNPD device. We also reported a standing method to further improve the degree of VB-FNPD polymerization, resulting in the improved device performance, with the EQE of 8.64%.

Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

2014 ◽  
Vol 105 (13) ◽  
pp. 133104 ◽  
Author(s):  
Jong-Hoon Kim ◽  
Ki-Heon Lee ◽  
Dae-Yeon Jo ◽  
Yangjin Lee ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Light Emitting
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