van der Waals force layered multiferroic hybrid perovskite (CH3NH3)2CuCl4 single crystals

2020 ◽  
Vol 22 (7) ◽  
pp. 4235-4239
Author(s):  
Zhao Hu ◽  
Hongyang Zhao ◽  
Zhenxiang Cheng ◽  
Jianxu Ding ◽  
Han Gao ◽  
...  
Keyword(s):  
Single Crystals ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Van Der Waals Force ◽  
Organic Group ◽  
Hybrid Perovskite

In inorganic–organic perovskites, the three-dimensional arrangement of the organic group results in more subtle balance of charge, spin and space, thereby providing an attractive route toward new multiferroics.

scholarly journals Superconducting contact and quantum interference between two-dimensional van der Waals and three-dimensional conventional superconductors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Michael R. Sinko ◽  
Sergio C. de la Barrera ◽  
Olivia Lanes ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Two Dimensional

Van der Waals Epitaxy of GaSe on GaAs(111)

1994 ◽  
Vol 340 ◽  
Author(s):  
L. E. Rumaner ◽  
F.S. Ohuchi
Keyword(s):  
Lattice Mismatch ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Structured Materials ◽  
Lattice Matching ◽  
Molecular Beam Deposition ◽  
Crystal Films ◽  
Low Dimensional ◽  
Matching Constraints ◽  
Lattice Matched

ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints. A new concept for fabricating material systems using the atomically abrupt and low dimensional nature of layered materials, called van der Waals epitaxy (VDWE), has been developed. GaSe (Eg = 2.1 eV) has been deposited on the three dimensional surface of GaAs (111) using a molecular beam deposition system. GaSe was evaporated from a single Knudsen source, impinging on a heated substrate. Even with a lattice mismatch of 6% between the substrate and the growing film, good quality single crystal films were grown as determined by RHEED. The films have further been analyzed using a complementary combination of XPS and X-ray reflectivity.

scholarly journals First-Principles Study on Graphene/Mg2Si Interface of Selective Laser Melting Graphene/Aluminum Matrix Composites

Metals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 941
Author(s):  
Zhanyong Zhao ◽  
Shijie Chang ◽  
Jie Wang ◽  
Peikang Bai ◽  
Wenbo Du ◽  
...  
Keyword(s):  
Interfacial Energy ◽  
First Principles ◽  
Lattice Mismatch ◽  
Van Der Waals ◽  
Aluminum Matrix ◽  
Van Der Waals Force ◽  
Aluminum Matrix Composites ◽  
Matrix Composites ◽  
Charge Density Difference ◽  
Interface Charge

The bonding strength of a Gr/Mg2Si interface was calculated by first principles. Graphene can form a stable, completely coherent interface with Mg2Si. When the (0001) Gr/(001) Mg2Si crystal plane is combined, the mismatch degree is 5.394%, which conforms to the two-dimensional lattice mismatch theory. At the interface between Gr/Mg2Si, chemical bonds were not formed, there was only a strong van der Waals force; the interfaces composed of three low index surfaces (001), (011) and (111) of Mg2Si and Gr (0001) have smaller interfacial adhesion work and larger interfacial energy, the interfacial energy of Gr/Mg2Si is much larger than that of α-Al/Al melt and Gr/Al interfacial (0.15 J/m2, 0.16 J/m2), and the interface distance of a stable interface is larger than the bond length of a chemical bond. The interface charge density difference diagram and density of states curve show that there is only strong van der Waals force in a Gr/Mg2Si interface. Therefore, when the Gr/AlSi10Mg composite is stressed and deformed, the Gr/Mg2Si interface in the composite is easy to separate and become the crack propagation source. The Gr/Mg2Si interface should be avoided in the preparation of Gr/AlSi10Mg composite.

Three-dimensional visualization of the inner structure of single crystals by step-scanning white X-ray section topography

2006 ◽  
Vol 13 (6) ◽  
pp. 484-488 ◽  
Author(s):  
Taihei Mukaide ◽  
Kentaro Kajiwara ◽  
Takashi Noma ◽  
Kazuhiro Takada
Keyword(s):  
Single Crystals ◽  
Three Dimensional ◽  
X Ray ◽  
Section Topography

Modeling and Validation of the van der Waals Force During the Adhesion of Nanoscale Objects to Rough Surfaces: A Detailed Description

Langmuir ◽  
2009 ◽  
Vol 25 (18) ◽  
pp. 10612-10623 ◽  
Author(s):  
Ravi P. Jaiswal ◽  
Gautam Kumar ◽  
Caitlin M. Kilroy ◽  
Stephen P. Beaudoin
Keyword(s):  
Rough Surfaces ◽  
Van Der Waals ◽  
Van Der Waals Force
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