Role of the carbon source in the transformation of amorphous carbon to graphene during rapid thermal processing

2019 ◽  
Vol 21 (18) ◽  
pp. 9384-9390 ◽  
Author(s):  
Xiaowei Li ◽  
Yong Zhou ◽  
Xiaowei Xu ◽  
Aiying Wang ◽  
Kwang-Ryeol Lee
Keyword(s):  
Carbon Source ◽  
Amorphous Carbon ◽  
Thermal Processing ◽  
Rapid Thermal Processing

A fast transfer-free synthesis of a graphene structure can be successfully achieved by Ni-catalysed transformation of amorphous carbon (a-C) during rapid thermal processing, but the role of the a-C structure in the a-C-to-graphene transformation is still unclear.

The Role of Thermal Radiative Properties of Semiconductor Wafers in Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
P. J. Timans
Keyword(s):  
Thermal Processing ◽  
Radiation Heat Transfer ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
Radiative Properties ◽  
Thermal Radiative Properties ◽  
Wide Range ◽  
Basic Physics ◽  
Key Issues

AbstractRapid thermal processing (RTP) has become a key technology in the fabrication of advanced semiconductor devices. As RTP becomes the accepted technique for an increasingly wide range of processes in device fabrication, the understanding of the basic physics of radiation heat transfer in RTP systems is also being extended rapidly. This paper illustrates the use of optical models for prediction of the thermal radiative properties of semiconductor wafers. Such calculations can be used to address many of the key issues of interest in RTP, including questions concerning temperature measurement and process repeatability.

The Control and Impact of Processing Ambient During RTP

1998 ◽  
Vol 514 ◽  
Author(s):  
Karen Maex ◽  
Eiichi Kondoh ◽  
Anne Lauwers ◽  
Muriel DePotter ◽  
Joris Prost
Keyword(s):  
Thermal Processing ◽  
Thermal Process ◽  
Rapid Thermal Processing ◽  
Process Window ◽  
Temperature Uniformity ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Set Up ◽  
Interconnect Technology

ABSTRACTThe introduction of rapid thermal processing for silicide formation has triggered a lot of research to temperature uniformity and reproducibility in RTP systems. From the other side there has been the demand to make the process itself as robust as possible for temperature variations. Indeed the way the module is set up can open or close the thermal process window for silicidation. In addition to the temperature, the ambient control is to be taken into account. Although gasses are specified to a low level of contaminants, the RTP step needs to be optimized for optimal contaminant reduction. Besides, the process wafer itself can be a source of contamination. In this paper an overview will be given of the role of temperature and ambient during RTP on the silicidation processes. The effect of the wafer on ambient purity will be highlighted. It will be shown that the latter can also have an impact on other process steps in the interconnect technology.

scholarly journals An ab initio study of the nickel-catalyzed transformation of amorphous carbon into graphene in rapid thermal processing

Nanoscale ◽  
2016 ◽  
Vol 8 (18) ◽  
pp. 9746-9755 ◽  
Author(s):  
Shuang Chen ◽  
Wei Xiong ◽  
Yun Shen Zhou ◽  
Yong Feng Lu ◽  
Xiao Cheng Zeng
Keyword(s):  
Ab Initio ◽  
Viscous Liquid ◽  
Amorphous Carbon ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Ab Initio Study

The fast formation of defective graphitic C structures and the easy evaporation of surplus Ni atoms with excess C atoms are likely attributed to the formation of a viscous-liquid-like Ni–C solution and the faster diffusion of C atoms in Ni at 1200 K.

Growth of Carbon Nanotubes via Rapid Thermal Processing from sputtered amorphous carbon

2008 ◽  
Vol 2 (1/2) ◽  
pp. 40 ◽  
Author(s):  
Soon Eng Ong ◽  
Sam Zhang ◽  
Jang Hsing Hsieh ◽  
Hejun Du ◽  
Shiu Hann Oh
Keyword(s):  
Carbon Nanotubes ◽  
Amorphous Carbon ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Control and Impact of Processing Ambient During Rapid Thermal Silicidation

1998 ◽  
Vol 525 ◽  
Author(s):  
K. Maex ◽  
E. Kondoh ◽  
A. Lauwers ◽  
A. Steegen ◽  
M. De Potter ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Silicide Formation ◽  
Capping Layer ◽  
Low Level ◽  
Reactive Capping ◽  
Sources Of Contamination

ABSTRACTThe introduction of rapid thermal processing for silicide formation has triggered a lot of research to temperature uniformity and reproducibility in RTP systems. In addition to the temperature, the ambient control is to be taken into account. Although gasses are specified to a low level of contaminants, the RTP step needs to be optimised for optimal contaminant reduction. Besides, the process wafer itself is a source of contamination.In this paper an overview will be given of the role of RTP ambient on the silicidation processes. The effect of the wafer on ambient purity will be highlighted. It will be shown that the use of a reactive capping layer during silicidation represents an adequate solution for both sources of contamination.

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