The electronic applications of stable diradicaloids: present and future

2018 ◽  
Vol 6 (42) ◽  
pp. 11232-11242 ◽  
Author(s):  
Xiaoguang Hu ◽  
Wenxiang Wang ◽  
Dongsheng Wang ◽  
Yonghao Zheng
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Logic Gates ◽  
Linear Optics ◽  
Non Linear Optics ◽  
Potential Applications ◽  
Future Potential ◽  
Effect Transistor ◽  
Organic Batteries

Diradicaloids are promising materials for organic electronics and nonlinear optics due to their unique optical, electronic and magnetic properties. High performance organic field-effect transistor and photodetector based on diradicaloids have been achieved. Future potential applications in organic batteries, memory, logic gates and non-linear optics are expected.

A MoS2 Field-Effect Transistor With a Liquid Back Gate

2016 ◽  
Author(s):  
Kabin Lin ◽  
Zhishan Yuan ◽  
Yu Yu ◽  
Kun Li ◽  
Haojie Yang ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Gate Voltage ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Control Effect ◽  
Back Gate ◽  
Potential Applications ◽  
Source Current ◽  
Effect Transistor

The two-dimensional layer of Molybdenum disulfide (MoS2) has attracted much interest due to its direct-gap property and potential applications in the field of catalysis, nanotribology, microelectronics, lithium batteries, hydrogen storage, medical, high-performance flexible electronics and optoelectronics. In this paper, based on few-layer MoS2 acquired by mechanical exfoliation method, a MoS2 liquid-gated field effect transistor (L-FET) is fabricated. Simultaneously, the few-layer MoS2 is characterized by Raman spectral. Then, the performance of MoS2-based L-FET devices is investigated by a source meter instrument in the different back gate voltage of 0.1mol/L NaCl solution. The result reveals that the Schottky barriers is formed between platinum and few-layer MoS2 and the back gate voltage has a great control effect with the drain-to-source current of MoS2 field effect transistor.

High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure

2020 ◽  
Vol 12 (4) ◽  
pp. 5106-5112 ◽  
Author(s):  
Gwang Hyuk Shin ◽  
Geon-Beom Lee ◽  
Eun-Su An ◽  
Cheolmin Park ◽  
Hyeok Jun Jin ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Van Der Waals ◽  
Logic Gates ◽  
Van Der Waals Heterostructure ◽  
Effect Transistor

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate

1988 ◽  
Vol 9 (5) ◽  
pp. 205-207 ◽  
Author(s):  
K.-W. Wang ◽  
C.-L. Cheng ◽  
J. Long ◽  
D. Mitcham
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor

Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor

2021 ◽  
Vol 129 (14) ◽  
pp. 145106
Author(s):  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Mousam Charan Sahu ◽  
Sanjeev K. Gupta ◽  
Saroj Prasad Dash ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Free Field ◽  
Monolayer Mos2 ◽  
Effect Transistor

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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