Atomically thin semiconducting penta-PdP2 and PdAs2 with ultrahigh carrier mobility

2018 ◽  
Vol 6 (34) ◽  
pp. 9055-9059 ◽  
Author(s):  
Hao Yuan ◽  
Zhenyu Li ◽  
Jinlong Yang
Keyword(s):  
Carrier Mobility ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
High Carrier

Two dimensional materials with a pentagonal structure and ultra-high carrier mobilities have been designed theoretically.

scholarly journals KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism

Nanoscale ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 1131-1139 ◽  
Author(s):  
Ya-Qian Song ◽  
Jun-Hui Yuan ◽  
Li-Heng Li ◽  
Ming Xu ◽  
Jia-Fu Wang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Two Dimensional ◽  
High Demand ◽  
Two Dimensional Materials ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional materials with high carrier mobility and tunable magnetism are in high demand for nanoelectronic and spintronic applications.

High carrier mobility of few-layer PbX (X = S, Se, Te)

2015 ◽  
Vol 3 (24) ◽  
pp. 6284-6290 ◽  
Author(s):  
Xi-Bo Li ◽  
Pan Guo ◽  
Yan-Ning Zhang ◽  
Ru-Fang Peng ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Higher Carrier Mobility

Two-dimensional materials with a higher carrier mobility are promising materials for applications in nanoelectronics and photocatalysis.

Auxetic, flexible, and strain-tunable two-dimensional th-AlN for photocatalytic visible light water splitting with anisotropic high carrier mobility

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee
Keyword(s):  
Optical Properties ◽  
Visible Light ◽  
Water Splitting ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Light Water ◽  
Photocatalytic Water Splitting ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.

Mechanical, electronic and optical properties of novel B2P6 monolayer: ultrahigh carrier mobility and strong optical absorption

2021 ◽  
Author(s):  
Kai Ren ◽  
Huabing Shu ◽  
Wenyi Huo ◽  
Zhen Cui ◽  
Jin Yu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Carrier Mobility ◽  
2D Materials ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional (2D) materials with moderate bandgap and high carrier mobility are decent for the applications in the optoelectronics. In this work, we present a systematically investigation of the mechanical, electronic...

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

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