Distorted Janus Transition Metal Dichalcogenides: Stable Two-Dimensional Materials with Sizable Band Gap and Ultrahigh Carrier Mobility

2018 ◽  
Vol 122 (33) ◽  
pp. 19153-19160 ◽  
Author(s):  
Xiao Tang ◽  
Shengshi Li ◽  
Yandong Ma ◽  
Aijun Du ◽  
Ting Liao ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

scholarly journals Photo-Detectors Based on Two Dimensional Materials

2021 ◽  
Author(s):  
Mubashir A. Kharadi ◽  
Gul Faroz A. Malik ◽  
Farooq A. Khanday
Keyword(s):  
Transition Metal ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Wide Range ◽  
Two Dimensional Materials ◽  
Photo Detectors ◽  
Metal Dichalcogenides ◽  
Application Specific

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.

Bidirectional doping of two-dimensional thin-layer transition metal dichalcogenides by soft ammonia plasma

Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Two Dimensional ◽  
Layer Transition ◽  
Microelectronic Devices ◽  
Metal Dichalcogenides ◽  
P Type

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...

scholarly journals Transition metal dichalcogenide metamaterials with atomic precision

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Battulga Munkhbat ◽  
Andrew B. Yankovich ◽  
Denis G. Baranov ◽  
Ruggero Verre ◽  
Eva Olsson ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Graphene Monolayer ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Precise Control ◽  
Two Dimensional Materials ◽  
Atomic Precision ◽  
Metal Dichalcogenides ◽  
The One

Abstract The ability to extract materials just a few atoms thick has led to the discoveries of graphene, monolayer transition metal dichalcogenides (TMDs), and other important two-dimensional materials. The next step in promoting the understanding and utility of flatland physics is to study the one-dimensional edges of these two-dimensional materials as well as to control the edge-plane ratio. Edges typically exhibit properties that are unique and distinctly different from those of planes and bulk. Thus, controlling the edges would allow the design of materials with combined edge-plane-bulk characteristics and tailored properties, that is, TMD metamaterials. However, the enabling technology to explore such metamaterials with high precision has not yet been developed. Here we report a facile and controllable anisotropic wet etching method that allows scalable fabrication of TMD metamaterials with atomic precision. We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are nearly atomically sharp and exclusively zigzag-terminated. This results in hexagonal nanostructures of predefined order and complexity, including few-nanometer-thin nanoribbons and nanojunctions. Thus, this method enables future studies of a broad range of TMD metamaterials through atomically precise control of the structure.

Fabry-Perot Cavity Enhanced Three-photon Luminescence of Atomically Thin Platinum Diselenide

Nanoscale ◽  
2021 ◽  
Author(s):  
Jing Han ◽  
Yingwei Wang ◽  
Jun He ◽  
Hua Lu ◽  
Xiangping Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Physical Properties ◽  
Technology Development ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Fabry Perot ◽  
Metal Dichalcogenides ◽  
Fundamental Research ◽  
Thin Platinum

Two-dimensional materials, such as transition metal dichalcogenides (TMDs) exhibit intriguing physical properties that lead to both fundamental research and technology development. The recently emerged platinum diselenide (PtSe2), as a new...

Niobium disulfide as a new saturable absorber for an ultrafast fiber laser

Nanoscale ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 4537-4543 ◽  
Author(s):  
Lu Li ◽  
Lihui Pang ◽  
Qiyi Zhao ◽  
Yonggang Wang ◽  
Wenjun Liu
Keyword(s):  
Transition Metal ◽  
Fiber Laser ◽  
Saturable Absorber ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
Material Sciences ◽  
Niobium Disulfide

Group VB transition metal dichalcogenides (TMDCs) are emerging two-dimensional materials and have attracted significant interests in the fields of physics, chemistry, and material sciences.

The electronic structure calculations of two-dimensional transition-metal dichalcogenides in the presence of external electric and magnetic fields

2015 ◽  
Vol 44 (9) ◽  
pp. 2603-2614 ◽  
Author(s):  
Agnieszka Kuc ◽  
Thomas Heine
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Electronic Structure Calculations ◽  
Layered Materials ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Electric And Magnetic Fields ◽  
Metal Dichalcogenides ◽  
Structure Calculations

Transition-metal dichalcogenides TX2 (T = W, Mo; X = S, Se, Te) are layered materials that are available in ultrathin forms such as mono-, bi- and multilayers, which are commonly known as two-dimensional materials.

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