A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

2018 ◽  
Vol 6 (23) ◽  
pp. 6187-6193 ◽  
Author(s):  
Hyukjoon Yoo ◽  
Young Jun Tak ◽  
Won-Gi Kim ◽  
Yeong-gyu Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Atomic Diffusion ◽  
Indium Gallium Zinc Oxide ◽  
Diffusion Effect ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

IGZO TFTs with an instant glue passivation layer exhibit improved electrical performance and stability due to the atomic diffusion effect.

scholarly journals Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

2018 ◽  
Vol 6 (38) ◽  
pp. 10376-10376
Author(s):  
Hyukjoon Yoo ◽  
Young Jun Tak ◽  
Won-Gi Kim ◽  
Yeong-gyu Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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