Chemical manipulation of phase stability and electronic behavior in Cu4−xAgxSe2

2018 ◽  
Vol 6 (16) ◽  
pp. 6997-7004 ◽  
Author(s):  
A. Olvera ◽  
T. P. Bailey ◽  
C. Uher ◽  
P. F. P. Poudeu
Keyword(s):  
Phase Stability ◽  
Electronic Transport ◽  
Phase Segregation ◽  
Chemical Substitution ◽  
P Type ◽  
Electronic Behavior

Gradual stoichiometric chemical substitution of Cu by Ag in the p-type Cu2Se phase enables phase segregation and incremental switching of the electronic transport to n-type behavior for large Ag/Cu ratios.

Electronic transport in p-type Mg-doped GaAs nanowires

2016 ◽  
Vol 253 (10) ◽  
pp. 1960-1964 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborço ◽  
E. R. Viana ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

Ionic and p-type electronic transport in zircon-type Ce1 − xAxVO4 ± δ(A = Ca, Sr)

2002 ◽  
Vol 12 (12) ◽  
pp. 3738-3745 ◽  
Author(s):  
Ekaterina V. Tsipis ◽  
Mikhail V. Patrakeev ◽  
Vladislav V. Kharton ◽  
Nikolai P. Vyshatko ◽  
Jorge R. Frade
Keyword(s):  
Electronic Transport ◽  
P Type ◽  
Zircon Type

scholarly journals Correction to “Understanding the Intrinsic P-Type Behavior and Phase Stability of Thermoelectric α-Mg3Sb2”

2020 ◽  
Vol 3 (1) ◽  
pp. 1249-1252
Author(s):  
XiaoYu Chong ◽  
Pin-Wen Guan ◽  
Yi Wang ◽  
Shun-Li Shang ◽  
Jorge Paz Soldan Palma ◽  
...  
Keyword(s):  
Phase Stability ◽  
P Type

scholarly journals Gate-tunable electronic transport in p -type GaSb quantum wells

2019 ◽  
Vol 99 (11) ◽  
Author(s):  
Matija Karalic ◽  
Christopher Mittag ◽  
Michael Hug ◽  
Thomas Tschirky ◽  
Werner Wegscheider ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic Transport ◽  
P Type

scholarly journals Beneficial CuO Phase Segregation in the Ternary p-Type Oxide Photocathode CuBi2O4

2019 ◽  
Vol 2 (6) ◽  
pp. 4111-4117 ◽  
Author(s):  
Zemin Zhang ◽  
Sarah A. Lindley ◽  
Rohan Dhall ◽  
Karen Bustillo ◽  
Weihua Han ◽  
...  
Keyword(s):  
Phase Segregation ◽  
P Type

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

2009 ◽  
Vol 16 (06) ◽  
pp. 869-873 ◽  
Author(s):  
GUANGHUI XU ◽  
XIANGYANG JING ◽  
YIN ZHANG ◽  
BAIBIAO HUANG
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Method ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ce Modification ◽  
P Type

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

Electronic transport and Schottky barrier height of Ni contact on p-type GaN

2008 ◽  
Vol 41 (9) ◽  
pp. 095107 ◽  
Author(s):  
Yow-Jon Lin ◽  
Ching-Ting Lee ◽  
Shih-Sheng Chang ◽  
Hsing-Cheng Chang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electronic Transport ◽  
Schottky Barrier Height ◽  
P Type
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