scholarly journals Sustainable p-type copper selenide solar material with ultra-large absorption coefficient

2018 ◽  
Vol 9 (24) ◽  
pp. 5405-5414 ◽  
Author(s):  
Erica M. Chen ◽  
Logan Williams ◽  
Alan Olvera ◽  
Cheng Zhang ◽  
Mingfei Zhang ◽  
...  
Keyword(s):  
Absorption Coefficient ◽  
Band Gap ◽  
Copper Selenide ◽  
Visible Range ◽  
Solar Absorber ◽  
Absorber Material ◽  
Earth Abundant ◽  
Solar Material ◽  
P Type

We report the synthesis of CTSe, a p-type titanium copper selenide semiconductor. Its band gap (1.15 eV) and its ultra-large absorption coefficient (105 cm−1) in the entire visible range make it a promising Earth-abundant solar absorber material.

Thin Film WSe2 for Use as a Photovoltaic Absorber Material

2014 ◽  
Vol 1670 ◽  
Author(s):  
Qinglei Ma ◽  
Hrachya Kyureghian ◽  
Joel D. Banninga ◽  
N. J. Ianno
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Spectrum ◽  
Absorber Material ◽  
Excellent Candidate ◽  
Earth Abundant ◽  
Type Semiconductor ◽  
Sputter Deposited ◽  
P Type

ABSTRACTAn excellent candidate for an earth abundant absorber material is WSe2 which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.4 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in the 1017cm-3 range and p-type Hall mobilities greater than 10 cm2/V-s range can be obtained. We employ these results to numerically simulate solar cells based on this material, where we will show efficiencies greater than 20% are possible.

Codoping n- and p-Type Impurities in Colloidal Silicon Nanocrystals: Controlling Luminescence Energy from below Bulk Band Gap to Visible Range

2013 ◽  
Vol 117 (22) ◽  
pp. 11850-11857 ◽  
Author(s):  
Hiroshi Sugimoto ◽  
Minoru Fujii ◽  
Kenji Imakita ◽  
Shinji Hayashi ◽  
Kensuke Akamatsu
Keyword(s):  
Band Gap ◽  
Silicon Nanocrystals ◽  
Visible Range ◽  
P Type ◽  
Bulk Band

scholarly journals Screening of suitable cationic dopants for solar absorber material CZTS/Se: A first principles study

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
M. V. Jyothirmai ◽  
Himanshu Saini ◽  
Noejung Park ◽  
Ranjit Thapa
Keyword(s):  
Optical Absorption ◽  
Conversion Efficiency ◽  
Current Density ◽  
Energy Gap ◽  
Optical Absorption Coefficient ◽  
Visible Range ◽  
Hybrid Functional ◽  
Solar Absorber ◽  
Absorber Material ◽  
High Efficient

Abstract The earth abundant and non-toxic solar absorber material kesterite Cu2ZnSn(S/Se)4 has been studied to achieve high power conversion efficiency beyond various limitations, such as secondary phases, antisite defects, band gap adjustment and microstructure. To alleviate these hurdles, we employed screening based approach to find suitable cationic dopant that can promote the current density and the theoretical maximum upper limit of the energy conversion efficiency (P(%)) of CZTS/Se solar devices. For this task, the hybrid functional (Heyd, Scuseria and Ernzerhof, HSE06) were used to study the electronic and optical properties of cation (Al, Sb, Ga, Ba) doped CZTS/Se. Our in-depth investigation reveals that the Sb atom is suitable dopant of CZTS/CZTSe and also it has comparable bulk modulus as of pure material. The optical absorption coefficient of Sb doped CZTS/Se is considerably larger than the pure materials because of easy formation of visible range exciton due to the presence of defect state below the Fermi level, which leads to an increase in the current density and P(%). Our results demonstrate that the lower formation energy, preferable energy gap and excellent optical absorption of the Sb doped CZTS/Se make it potential component for relatively high efficient solar cells.

Electronic structures and optical properties of α-Fe2O3-xSex alloys for solar absorber

2015 ◽  
Vol 29 (12) ◽  
pp. 1550050 ◽  
Author(s):  
Congxin Xia ◽  
Yu Jia ◽  
Qiming Zhang
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
First Principles ◽  
Electronic Structures ◽  
Visible Range ◽  
Optical Absorption Edge ◽  
Band Structures ◽  
Solar Absorber ◽  
Direct Band ◽  
Gap Values

The band structures and optical properties of α- Fe 2 O 3-x Se x alloys are studied by means of first-principles methods, considering different Se contents x. Numerical results show that Se content has an obvious influence on band structures and optical properties of α- Fe 2 O 3-x Se x alloys. The band gap values of α- Fe 2 O 3-x Se x alloys decrease monotonically when Se concentrations increase, resulting in an obvious increase of the optical absorption edge in the visible range. In particular, our results show that α- Fe 2 O 3-x Se x alloys have the direct band gap properties with band gap values when Se content x ≈ 0.17, which is beneficial to solar cell applications.

Cost Effective Synthesis and Fabrication of Phase-Pure Kesterite Cu2-xZn1.3SnS4 P-type Absorber Layer Thin Films by Solvent Based Process Technique for Photovoltaic Solar Energy Applications

2018 ◽  
Vol 7 (4) ◽  
pp. 36
Author(s):  
B. Khadambari ◽  
S. S. Bhattacharya
Keyword(s):  
Solar Energy ◽  
Renewable Energy Sources ◽  
Cost Effective ◽  
Absorber Layer ◽  
Window Layer ◽  
Energy Applications ◽  
Process Technique ◽  
Absorber Material ◽  
Effective Synthesis ◽  
P Type

Solar has become one of the fastest growing renewable energy sources. With the push towards sustainability it is an excellent solution to resolve the issue of our diminishing finite resources. Alternative photovoltaic systems are of much importance to utilize solar energy efficiently. The Cu-chalcopyrite compounds CuInS2 and CuInSe2 and their alloys provide absorber material of high absorption coefficients of the order of 105 cm-1. Cu2ZnSnS4 (CZTS) is more promising material for photovoltaic applications as Zn and Sn are abundant materials of earth’s crust. Further, the preparation of CZTS-ink facilitates the production of flexible solar cells. The device can be designed with Al doped ZnO as the front contact, n-type window layer (e.g. intrinsic ZnO); an n-type thin film buffer layer (e.g. CdS) and a p-type CZTS absorber layer with Molybdenum (Mo) substrate as back contact. In this study, CZTS films were synthesized by a non-vaccum solvent based process technique from a molecular-ink using a non toxic eco-friendly solvent dimethyl sulfoxide (DMSO). The deposited CZTS films were optimized and characterized by XRD, UV-visible spectroscopy and SEM.

Tailored Electronic Band Gap and Valance Band Edge of Nickel Oxide via p-Type Incorporation

2021 ◽  
Vol 125 (13) ◽  
pp. 7495-7501
Author(s):  
Gang Wang ◽  
Jinju Zheng ◽  
Boyi Xu ◽  
Chaonan Zhang ◽  
Yue Zhu ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Band Gap ◽  
Band Edge ◽  
Electronic Band ◽  
Electronic Band Gap ◽  
P Type

scholarly journals Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 988
Author(s):  
Chrysa Aivalioti ◽  
Alexandros Papadakis ◽  
Emmanouil Manidakis ◽  
Maria Kayambaki ◽  
Maria Androulidaki ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Phase ◽  
Structural Disorder ◽  
Energy Band Gap ◽  
Nitrogen Doped ◽  
Nio Thin Film ◽  
Direct Band ◽  
Output Characteristics ◽  
Indirect Band Gap ◽  
P Type

Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

Wide band gap and p-type conductive Cu-Nb-O films

2011 ◽  
Vol 5 (4) ◽  
pp. 153-155 ◽  
Author(s):  
Seiji Yamazoe ◽  
Shunsuke Yanagimoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

Spectroscopic Analysis and Synthesis of Wide Band Gap CdS Quantum Dots Using Colloidal Synthesis Technique at Low Temperature

2009 ◽  
Vol 67 ◽  
pp. 191-196 ◽  
Author(s):  
Lubna Hashmi ◽  
M.S. Qureshi ◽  
R.N. Dubey ◽  
M.M. Malik ◽  
Ishrat Alim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Spectroscopic Analysis ◽  
Quantum Confinement Effect ◽  
Wide Band ◽  
Colloidal Synthesis ◽  
Visible Range ◽  
Wide Band Gap ◽  
Synthesis Technique ◽  
Analysis And Synthesis

A broad range of II-VI materials has been investigated in order to produce light in the full visible range for optoelectronic applications. The present investigation was carried out for the spectroscopic analysis and synthesis of wide band gap cadmium sulfide nanoparticles. Large-band gap semiconductors have the added advantage in that; they can support higher electric field before breaking down, which means that they can be used for high-power electronic devices.Synthesis has been carried out using colloidal synthesis technique at low temperature. The size, stabilization and optical properties were studied using UV-vis Spectrophotometer and Spectroflourometer. Further, the structural studies of synthesized powder were carried out using X-ray diffraction technique; which also confirms the formation of desired product. The capping ligand and the impurities present in the sample were characterized by Fourier transform infra red spectroscopy. Synthesized CdS powder dispersed in aqueous media gave the value of 193 nm for the onset wavelength using UV-vis spectrophotometer, which is significantly blue-shifted compared to bulk CdS and shows the quantum confinement effect. From the onset wavelength the radius of CdS quantum dot calculated using the Brus equation was found to be ca. 0.7 nm.

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