scholarly journals Laser patterned, high-power graphene paper resistor with dual temperature coefficient of resistance

RSC Advances ◽  
2019 ◽  
Vol 9 (15) ◽  
pp. 8262-8270 ◽  
Author(s):  
Sandeep Kumar ◽  
Kapil Bhatt ◽  
Pramod Kumar ◽  
Sandeep Sharma ◽  
Amit Kumar ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
High Power ◽  
Electronic Devices ◽  
Temperature Coefficient Of Resistance ◽  
Paper Substrate ◽  
Graphene Paper

Printing of electronic devices on a paper substrate using 2D graphene-based ink is an opening gate to innovative applications, where devices would be biodegradable, eco-friendly and can be disposed of with negligible impact on the environment.

EVANOHM

Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Temperature Coefficient Of Resistance ◽  
High Electrical Resistivity ◽  
Nickel Base

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.

EVANOHM ALLOY S

Alloy Digest ◽  
1989 ◽  
Vol 38 (7) ◽  
Keyword(s):  
Electrical Resistivity ◽  
Corrosion Resistance ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Electromotive Force ◽  
Temperature Coefficient Of Resistance ◽  
Resistance Wire ◽  
High Electrical Resistivity ◽  
Optimum Stability

Abstract EVANOHM alloy S offers optimum stability and flexibility with regard to both size and required temperature coefficient of resistance. Its extremely low electromotive force vs copper together with its high electrical resistivity are highly desirable properties in a precision resistance wire. This datasheet provides information on composition, physical properties, and tensile properties. It also includes information on corrosion resistance as well as joining. Filing Code: Ni-373. Producer or source: Wilbur B. Driver Company.

Technology of casting and properties of nickel microwires

2019 ◽  
pp. 124-129
Author(s):  
O. V. Vasilieva ◽  
B. V. Farmakovsky ◽  
M. V. Khromenkov
Keyword(s):  
Temperature Coefficient ◽  
Casting Process ◽  
Temperature Coefficient Of Resistance ◽  
Comprehensive Studies

The article presents results of comprehensive studies on the development of technology for the production of thermoresistant cast microwires from nickel with addition of small quantities of chromium (0.2–0.6%). The specific characteristics of the casting process were studied from the standpoint of stability and achieving high values of temperature coefficient of resistance.

Graphite Nanocomposite Substrates for Improved Performance of Flexible, High-Power AlGaN/GaN Electronic Devices

2021 ◽  
Author(s):  
Katherine M. Burzynski ◽  
Nicholas R. Glavin ◽  
Michael Snure ◽  
Michael J. Motala ◽  
John Ferguson ◽  
...  
Keyword(s):  
High Power ◽  
Electronic Devices ◽  
Improved Performance

scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

Ternary FePSe 3 Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

2021 ◽  
Vol 8 (18) ◽  
pp. 2100491
Author(s):  
Alei Li ◽  
Yanfeng Ge ◽  
Yuan Gan ◽  
Yulu L. Ren ◽  
Yingjie He ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Temperature Coefficient Of Resistance
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