Graphite Nanocomposite Substrates for Improved Performance of Flexible, High-Power AlGaN/GaN Electronic Devices

2021 ◽  
Author(s):  
Katherine M. Burzynski ◽  
Nicholas R. Glavin ◽  
Michael Snure ◽  
Michael J. Motala ◽  
John Ferguson ◽  
...  
Keyword(s):  
High Power ◽  
Electronic Devices ◽  
Improved Performance

scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

Design and Characteristics of Microfocus X-ray Source with Sealed Tube and Transmissive Target on Diamond Window

2021 ◽  
Vol 79 (6) ◽  
pp. 631-640
Author(s):  
Takaaki Tsunoda ◽  
Takeo Tsukamoto ◽  
Yoichi Ando ◽  
Yasuhiro Hamamoto ◽  
Yoichi Ikarashi ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Speed ◽  
Electronic Device ◽  
High Reliability ◽  
Electronic Devices ◽  
Lithium Ion ◽  
High Power Density ◽  
High Magnification ◽  
X Ray

Electronic devices such as medical instruments implanted in the human body and electronic control units installed in automobiles have a large impact on human life. The electronic circuits in these devices require highly reliable operation. Radiographic testing has recently been in strong demand as a nondestructive way to help ensure high reliability. Companies that use high-density micrometer-scale circuits or lithium-ion batteries require high speed and high magnification inspection of all parts. The authors have developed a new X-ray source supporting these requirements. The X-ray source has a sealed tube with a transmissive target on a diamond window that offers advantages over X-ray sources having a sealed tube with a reflective target. The X-ray source provides high-power-density X-ray with no anode degradation and a longer shelf life. In this paper, the authors will summarize X-ray source classification relevant to electronic device inspection and will detail X-ray source performance requirements and challenges. The paper will also elaborate on technologies employed in the X-ray source including tube design implementations for high-power-density X-ray, high resolution, and high magnification simultaneously; reduced system downtime for automated X-ray inspection; and reduced dosages utilizing quick X-ray on-and-off emission control for protection of sensitive electronic devices.

E-blood: High power aqueous redox flow cell for concurrent powering and cooling of electronic devices

Nano Energy ◽  
2021 ◽  
pp. 106864
Author(s):  
Xun Wang ◽  
Mengqi Gao ◽  
Yann Mei Lee ◽  
Manohar Salla ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
High Power ◽  
Electronic Devices ◽  
Flow Cell ◽  
Redox Flow Cell

Topology Optimization of High Power Electronic Devices

2001 ◽  
pp. 119-131
Author(s):  
Ronald H. W. Hoppe ◽  
Svetozara Petrova ◽  
Volker Schulz
Keyword(s):  
Topology Optimization ◽  
High Power ◽  
Electronic Devices ◽  
Power Electronic

scholarly journals Development of Technology for High-Power Industry Converters

2019 ◽  
Vol 8 (10) ◽  
pp. 3130-3132 ◽  
Keyword(s):  
Wind Turbines ◽  
High Power ◽  
Electronic Devices ◽  
Relevant Information ◽  
Power Industry ◽  
Power Converter ◽  
Power Electronic ◽  
Photo Voltaic ◽  
Universal Procedure

The power stable of the converters is actually coming from some milliwatts (as in a cellphone) to dozens of megawatts in an HVDC gearbox body. Along with "classic" electronic devices, power streams, as well as current, are actually utilized to hold relevant information, whereas along with power electronic devices, they lug power. This inverter may magnify source of power like gas- mobiles, little wind turbines, as well as photo-voltaic assortments (i.e. it agrees with for circulated power treatments). The principles of resources and also changes are actually described and also categorized. Coming from the general regulations of resource propinquities, a universal procedure of power converter formation exists.

scholarly journals Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Vytautas Jakštas ◽  
Justinas Jorudas ◽  
Vytautas Janonis ◽  
Linas Minkevičius ◽  
Irmantas Kašalynas ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Steady Current ◽  
Improved Performance

This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices demonstrate an improved performance in comparison with the ones processed on a sapphire substrate. Both the SDs and HEMTs show much smaller leakage current density and a higher ION/IOFF ratio, reaching values down to 3.0±1.2 mA/cm2 and up to 70 dB under the reverse electric field of 340 kV/cm, respectively. The higher thermal conductivity of the SiC substrate leads to the increase of steady current and transconductance, and better thermal management of the HEMT devices. In addition, a successful detection of terahertz (THz) waves with the AlGaN/GaN HEMT is demonstrated at room temperature. These results open further routes for the optimization of THz designs which may result in development of novel plasmonic THz devices.

Dirac nodal surface semimetallic carbon based structure as a universal anode material for metal-ion batteries with high performance

2021 ◽  
Author(s):  
Shouren Zhang ◽  
Huili Liu ◽  
Yadan Zhang ◽  
Shuaiwei Wang ◽  
Baocheng Yang
Keyword(s):  
Anode Material ◽  
High Power ◽  
Metal Ion ◽  
High Performance ◽  
Rapid Development ◽  
Electronic Devices ◽  
Storage Battery ◽  
Nodal Surface ◽  
Power Storage ◽  
Carbon Based

The rapid development of electronic devices require the high power storage battery. However, the reported 3D carbon based materials are semiconductor or metal and used for Li- or Na-ion battery...

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