scholarly journals CrO2-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance

RSC Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 3550-3557 ◽  
Author(s):  
Jiangchao Han ◽  
Jimei Shen ◽  
Guoying Gao
Keyword(s):  
Density Of States ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
Filtering Effect ◽  
Spin Diode ◽  
Spin Filtering

Spin-dependent device density of states in the CrO2/TiO2/CrO2 magnetic tunnel junction.

scholarly journals Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1342 ◽  
Author(s):  
Zongbin Chen ◽  
Tingzhou Li ◽  
Tie Yang ◽  
Heju Xu ◽  
Rabah Khenata ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Density Functional ◽  
Magnetic Tunnel Junction ◽  
Linear Type ◽  
Ultra Low Power ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Potential Applications ◽  
Spin Filtering

Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 − c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107).

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Jiaqi Zhou ◽  
Weisheng Zhao ◽  
Shouzhong Peng ◽  
Junfeng Qiao ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
First Principles Study

Understanding the effect of vacancy defects on spin transport in CrO2–graphene–CrO2 magnetic tunnel junction

2016 ◽  
Vol 30 (09) ◽  
pp. 1650102
Author(s):  
Sudhanshu Choudhary ◽  
Divya Kaushik
Keyword(s):  
Tunnel Junction ◽  
Spin Transport ◽  
Magnetic Tunnel Junction ◽  
Graphene Sheets ◽  
Half Metallic ◽  
High Tunnel ◽  
Vacancy Defects ◽  
Tunnel Magnetoresistance ◽  
Metallic Ferromagnet

In this paper, we investigate the effect of vacancy defects on spin transport in graphene-based magnetic tunnel junction (MTJ). An increase in conductance was seen in vacancy-defected MTJ structure which is in contrast to the results reported in past where a decrease in conductance with vacancy was observed for graphene sheets. This increase in conductance may be due to the use of CrO2 half-metallic ferromagnet (HMF) electrodes instead of metallic or ferromagnet (FM) electrodes. Furthermore, high tunnel magnetoresistance (TMR) [Formula: see text]99% and perfect spin filtration was obtained for both vacancy-defected and no-defect (pristine) MTJ structures. The TMR in vacancy-defected structure is seen to decrease by 6.2% and by 13% at bias voltages of 1.2[Formula: see text]V and 1.4[Formula: see text]V, when compared to TMR in no-defect MTJ structure.

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

2011 ◽  
Vol 25 (8) ◽  
pp. 2573-2576
Author(s):  
A. N. Useinov ◽  
N. K. Useinov ◽  
L. R. Tagirov ◽  
J. Kosel
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Resonant Tunnel

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

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