Thermal annealing effects on La2Hf2O7:Eu3+ nanoparticles: a curious case study of structural evolution and site-specific photo- and radio-luminescence

2018 ◽  
Vol 5 (10) ◽  
pp. 2508-2521 ◽  
Author(s):  
Santosh K. Gupta ◽  
Jose P. Zuniga ◽  
Maya Abdou ◽  
Yuanbing Mao
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Site Specific ◽  
Red Emission ◽  
Orange Emission ◽  
Annealing Effects

High temperature annealed La2Hf2O7:Eu3+ nanoparticles favor tunneling of Eu3+ to symmetric sites showing orange emission, whereas low temperature annealed samples favor red emission.

The Electrical Phenomena of Non-planar Structure and Devices using Plasma Doping

2005 ◽  
Vol 864 ◽  
Author(s):  
Jong-Heon Yang ◽  
In-Bok Baek ◽  
Kiju Im ◽  
Chang-Geun Ahn ◽  
Sungkweon Baek ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Gate Oxide ◽  
Subthreshold Slope ◽  
Oxide Interface ◽  
Substrate Heating ◽  
Plasma Doping ◽  
Device Reliability ◽  
Research Show

AbstractWe fabricated narrow fins structures and non-planar MOSFETs like FinFETs and triple-gate MOSFETs using plasma doping with substrate heating under 350··, and measured their I-V characteristics. Fins and MOSFETs using low-temperature doping process show good current drivability and low subthreshold slope. However, without post high-temperature thermal annealing, this process could not avoid generating defects and traps as well as mobile protons on the gate and gate oxide interface and junctions, and therefore degraded device reliability. The results of ultra-small MOSFET research show possibility of new memory devices with these traps and ions in devices.

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

1999 ◽  
Vol 28 (6) ◽  
pp. 637-648 ◽  
Author(s):  
P. Capper ◽  
C. D. Maxey ◽  
C. L. Jones ◽  
J. E. Gower ◽  
E. S. O’Keefe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Annealing Effects

Effect of Si Implantation and Rapid Thermal Annealing on GaAs/AlGaAs Superlattice Disordering.

1986 ◽  
Vol 77 ◽  
Author(s):  
J. D. Flood ◽  
G. Bahir ◽  
J. L. Merz ◽  
J. Kobayashi ◽  
T. Fukunaga ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Gas ◽  
Average Composition ◽  
Furnace Annealing ◽  
Strong Emission ◽  
Disordered Layer ◽  
Low Temperature Photoluminescence

ABSTRACTThe enhanced disordering of GaAs/AlGaAs superlattices by diffusion of Zn or Si has been reported by many authors. In the case of Si diffusion, the Si can be introduced during epitaxial growth, by implantation, or by diffusion from a sputtered Si mask. In this paper ion implantation is investigated, and the effect of rapid thermal annealing (RTA), used to minimize Si diffusion while eliminating the implant damage, is compared with furnace annealing (FA). Using low temperature photoluminescence (PL) and SIMS, it is found that no disordering of a GaAs/Al0.5Ga0.5As superlattice takes place for a 2 sec anneal at 900°C, and very minimal partial disordering is observed (reproducibly) for a 10 sec anneal at 970°C. This is in sharp contrast with the FA case (850°C for 30 min), for which significant disordering occurs. The PL spectra show luminescence from both GaAs and GaAs/Al0.5Ga0.5As layers in the case of high-temperature RTA suggesting that recrystallization has occurred without disorder, whereas strong emission is observed after FA which corresponds to a disordered layer of average-composition GaAs/Al0.15Ga0.25As In both cases, PL indicates that annealing of the implant damage has occurred. Thus, damage can be eliminated either with or without disordering the superlattice by using FA or RTA, respectively. This is important for 2-D electron gas structures, for which no broadening of the hetero-interface is desired.

Exsolution and inversion in pigeonite from the Whin Sill, Northern England

1978 ◽  
Vol 36 (1) ◽  
pp. 474-475
Author(s):  
P.P.K. Smith
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Homogeneous Nucleation ◽  
Silicate Mineral ◽  
Antiphase Boundaries ◽  
Two Phase ◽  
Primitive Form ◽  
The Core ◽  
Nucleation Mechanisms ◽  
And Inversion

Grains of pigeonite, a calcium-poor silicate mineral of the pyroxene group, from the Whin Sill dolerite have been ion-thinned and examined by TEM. The pigeonite is strongly zoned chemically from the composition Wo8En64FS28 in the core to Wo13En34FS53 at the rim. Two phase transformations have occurred during the cooling of this pigeonite:- exsolution of augite, a more calcic pyroxene, and inversion of the pigeonite from the high- temperature C face-centred form to the low-temperature primitive form, with the formation of antiphase boundaries (APB's). Different sequences of these exsolution and inversion reactions, together with different nucleation mechanisms of the augite, have created three distinct microstructures depending on the position in the grain.In the core of the grains small platelets of augite about 0.02μm thick have farmed parallel to the (001) plane (Fig. 1). These are thought to have exsolved by homogeneous nucleation. Subsequently the inversion of the pigeonite has led to the creation of APB's.

Superconducting Wind Generators with Capacities of 10 MW and Larger

2020 ◽  
Vol 10 (10) ◽  
pp. 59-67
Author(s):  
Victor N. ANTIPOV ◽  
◽  
Andrey D. GROZOV ◽  
Anna V. IVANOVA ◽  
◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Wind Power ◽  
State Of The Art ◽  
Superconducting Materials ◽  
Commercial Application ◽  
Synchronous Generators ◽  
High Temperature Superconducting ◽  
Wind Generators ◽  
Main Factor

The overall dimensions and mass of wind power units with capacities larger than 10 MW can be improved and their cost can be decreased by developing and constructing superconducting synchronous generators. The article analyzes foreign conceptual designs of superconducting synchronous generators based on different principles: with the use of high- and low-temperature superconductivity, fully superconducting or only with a superconducting excitation system, and with the use of different materials (MgB2, Bi2223, YBCO). A high cost of superconducting materials is the main factor impeding commercial application of superconducting generators. In view of the state of the art in the technology for manufacturing superconductors and their cost, a conclusion is drawn, according to which a synchronous gearless superconducting wind generator with a capacity of 10 MW with the field winding made of a high-temperature superconducting material (MgB2, Bi-2223 or YBCO) with the «ferromagnetic stator — ferromagnetic rotor» topology, with the stator diameter equal to 7—9 m, and with the number of poles equal to 32—40 has prospects for its practical use in the nearest future.

Passive Auto-Focus Algorithm for Correcting Image Distortions Caused by Gas Flow in High-Temperature Measurements of Surface Phenomena

2012 ◽  
Vol 17 (4) ◽  
pp. 379-384 ◽  
Author(s):  
Krzysztof Strzecha ◽  
Tomasz Koszmider ◽  
Damian Zarębski ◽  
Wojciech Łobodziński
Keyword(s):  
High Temperature ◽  
Gas Flow ◽  
Temperature Measurements ◽  
Surface Phenomena ◽  
Auto Focus ◽  
High Temperature Measurements

Abstract In this paper, a case-study of the auto-focus algorithm for correcting image distortions caused by gas flow in high-temperature measurements of surface phenomena is presented. This article shows results of proposed algorithm and methods for increasing its accuracy.

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