Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors

Meng Su; Xuming Zou; Youning Gong; Jianlu Wang; Yuan Liu; Johnny C. Ho; Xingqiang Liu; Lei Liao

doi:10.1039/c8nr06163g

Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors

Nanoscale ◽

10.1039/c8nr06163g ◽

2018 ◽

Vol 10 (40) ◽

pp. 19131-19139 ◽

Cited By ~ 4

Author(s):

Meng Su ◽

Xuming Zou ◽

Youning Gong ◽

Jianlu Wang ◽

Yuan Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Short Channel ◽

Q Switching

Nanowire based NC-FETs with SS values below 60 mV dec−1 are demonstrated. Short channel devices are fabricated using a self-alignment approach.

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Negative Capacitance in Short-Channel Tunnel Field-Effect Transistors

2019 Silicon Nanoelectronics Workshop (SNW) ◽

10.23919/snw.2019.8782929 ◽

2019 ◽

Author(s):

Hung-Jin Teng ◽

Yu-Hsuan Chen ◽

Nguyen Dang Chien ◽

Chun-Hsing Shih

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Short Channel

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Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2805716 ◽

2018 ◽

Vol 65 (4) ◽

pp. 1604-1610 ◽

Cited By ~ 14

Author(s):

Wei-Xiang You ◽

Chih-Peng Tsai ◽

Pin Su

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2017.2787063 ◽

2018 ◽

Vol 39 (2) ◽

pp. 300-303 ◽

Cited By ~ 60

Author(s):

Daewoong Kwon ◽

Korok Chatterjee ◽

Ava J. Tan ◽

Ajay K. Yadav ◽

Hong Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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Investigation of short-channel effects in 2D negative-capacitance field-effect transistors

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s.2017.8308758 ◽

2017 ◽

Author(s):

Wei-Xiang You ◽

Chih-Peng Tsai ◽

Pin Su

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Improved Temperature Resilience and Device Performance of Negative Capacitance Reconfigurable Field Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2961876 ◽

2020 ◽

Vol 67 (2) ◽

pp. 738-744

Author(s):

Priyanka Pandey ◽

Harsupreet Kaur

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Performance ◽

Negative Capacitance

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Multidomain Dynamics of Ferroelectric Polarization and its Coherency-Breaking in Negative Capacitance Field-Effect Transistors

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614531 ◽

2018 ◽

Cited By ~ 3

Author(s):

Hiroyuki Ota ◽

Tsutomu Ikegami ◽

Koichi Fukuda ◽

Junichi Hattori ◽

Hidehiro Asai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Ferroelectric Polarization ◽

Negative Capacitance

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Dependence of Short-Channel Effects on Semiconductor Bandgap in Tunnel Field-Effect Transistors

Journal of Physics Conference Series ◽

10.1088/1742-6596/1034/1/012003 ◽

2018 ◽

Vol 1034 ◽

pp. 012003

Author(s):

Nguyen Dang Chien ◽

Chun-Hsing Shih ◽

Hung-Jin Teng ◽

Cong-Kha Pham

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Advanced Electronic Materials ◽

10.1002/aelm.201870051 ◽

2018 ◽

Vol 4 (11) ◽

pp. 1870051 ◽

Cited By ~ 2

Author(s):

Luqi Tu ◽

Xudong Wang ◽

Jianlu Wang ◽

Xiangjian Meng ◽

Junhao Chu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Effect Transistor

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Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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