Anomalous isoelectronic chalcogen rejection in 2D anisotropic vdW TiS3(1−x)Se3x trichalcogenides

Nanoscale ◽  
2018 ◽  
Vol 10 (33) ◽  
pp. 15654-15660 ◽  
Author(s):  
Ashutosh Agarwal ◽  
Ying Qin ◽  
Bin Chen ◽  
Mark Blei ◽  
Kedi Wu ◽  
...  
Keyword(s):  
Isoelectronic Doping

Alloying in 2D trichalcogenide TiSSe shows unusual isoelectronic doping rejection.

Isoelectronic Doping of Graphdiyne with Boron and Nitrogen: Stable Configurations and Band Gap Modification

2012 ◽  
Vol 116 (15) ◽  
pp. 3934-3939 ◽  
Author(s):  
Hongxia Bu ◽  
Mingwen Zhao ◽  
Hongyu Zhang ◽  
Xiaopeng Wang ◽  
Yan Xi ◽  
...  
Keyword(s):  
Band Gap ◽  
Isoelectronic Doping

Alloying dichalcogenolate-protected Ag21 8-electron nanoclusters: A DFT investigation

Nanoscale ◽  
2021 ◽  
Author(s):  
Franck Gam ◽  
Isaac Chantrenne ◽  
samia Kahlal ◽  
Tzu-Hao Chiu ◽  
Jian-Hong Liao ◽  
...  
Keyword(s):  
Dft Calculations ◽  
Isoelectronic Doping

The isoelectronic doping of dichalcogenolato nanoclusters of the type [Ag21{E2P(OR)2}12]+ (E = S, Se) by any heteroatom belonging to groups 9-12 is systematically investigated by DFT calculations. Although they can...

Isoelectronic doping of AlGaN alloys

2003 ◽  
Vol 240 (2) ◽  
pp. 408-411 ◽  
Author(s):  
S. V. Novikov ◽  
L. X. Zhao ◽  
I. Harrison ◽  
C. T. Foxon
Keyword(s):  
Isoelectronic Doping

Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires

2009 ◽  
Vol 45 (4-5) ◽  
pp. 156-160 ◽  
Author(s):  
E. Nogales ◽  
B. Sánchez ◽  
B. Méndez ◽  
J. Piqueras
Keyword(s):  
Gallium Oxide ◽  
Oxide Nanowires ◽  
Isoelectronic Doping ◽  
Cathodoluminescence Study

scholarly journals Effect of isoelectronic doping on the honeycomb-lattice iridateA2IrO3

2014 ◽  
Vol 89 (24) ◽  
Author(s):  
S. Manni ◽  
Sungkyun Choi ◽  
I. I. Mazin ◽  
R. Coldea ◽  
Michaela Altmeyer ◽  
...  
Keyword(s):  
Honeycomb Lattice ◽  
Isoelectronic Doping

Characterization of MBE Grown GaAs With Isoelectronic Doping of Indium or Antimony

1987 ◽  
Vol 102 ◽  
Author(s):  
A.Z. Li ◽  
H.K. Kim ◽  
J. Jeong ◽  
J. Zhao ◽  
T.E. Schlesinger ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Growth Temperature ◽  
Deep Trap ◽  
Atomic Percent ◽  
Electron Traps ◽  
Trap Concentration ◽  
Dlts Spectrum ◽  
Isoelectronic Doping ◽  
Additional Improvement

ABSTRACTThe effects of In and Sb on the concentration of electron traps in MBE grown n-type GaAs are investigated. Two traps, labeled M3 and M6, dominate the DLTS spectrum. It is observed that at growth temperatures of 500 and 550° C their concentrations can be reduced by up to two orders of magnitude by the introduction of a few atomic percent of either In or Sb. The percent In or Sb producing the lowest trap concentrations decreases with increasing substrate temperature and thus for a substrate growth temperature of 600° C no additional improvement in the deep trap concentration is observed.

scholarly journals High-pressure versus isoelectronic doping effect on the honeycomb iridate Na2IrO3

2017 ◽  
Vol 96 (19) ◽  
Author(s):  
V. Hermann ◽  
J. Ebad-Allah ◽  
F. Freund ◽  
I. M. Pietsch ◽  
A. Jesche ◽  
...  
Keyword(s):  
High Pressure ◽  
Doping Effect ◽  
Isoelectronic Doping
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