scholarly journals Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

Nanoscale ◽  
2018 ◽  
Vol 10 (16) ◽  
pp. 7792-7802 ◽  
Author(s):  
Dingkun Ren ◽  
Adam C. Scofield ◽  
Alan C. Farrell ◽  
Zixuan Rong ◽  
Michael A. Haddad ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Transient Model ◽  
Time Resolved ◽  
Si Substrates ◽  
Gaas Nanowires ◽  
Time Resolved Photoluminescence ◽  
Simulated Time

Simulated time-resolved photoluminescence curves and temporal carrier distributions for GaAs nanowires on Si substrates.

Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

2006 ◽  
Vol 958 ◽  
Author(s):  
Takashi Suemasu ◽  
Cheng Li ◽  
Tsuyoshi Sunohara ◽  
Yuta Ugajin ◽  
Ken'ichi Kobayashi ◽  
...  
Keyword(s):  
Decay Time ◽  
Room Temperature ◽  
Time Resolved ◽  
Iron Disilicide ◽  
Light Emitting ◽  
Si Substrates ◽  
Carrier Recombination ◽  
Double Heterostructures ◽  
Time Resolved Photoluminescence

ABSTRACTWe have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.

scholarly journals Long-range exciton diffusion in non-fullerene acceptors and coarse bulk heterojunctions enable highly efficient organic photovoltaics

2020 ◽  
Vol 8 (31) ◽  
pp. 15687-15694
Author(s):  
Muhammad T. Sajjad ◽  
Arvydas Ruseckas ◽  
Lethy Krishnan Jagadamma ◽  
Yiwei Zhang ◽  
Ifor D. W. Samuel
Keyword(s):  
Long Range ◽  
Organic Photovoltaics ◽  
Diffusion Length ◽  
Three Dimensional ◽  
Accurate Estimate ◽  
Bulk Heterojunctions ◽  
Time Resolved ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence measurements provide an accurate estimate of the three-dimensional exciton diffusion length in three ITICs based non-fullerene acceptors (NFAs).

scholarly journals Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

2020 ◽  
Vol 127 (10) ◽  
pp. 103104 ◽  
Author(s):  
Yuting Shi ◽  
Lisa C. Kreuzer ◽  
Nils C. Gerhardt ◽  
Marianna Pantouvaki ◽  
Joris Van Campenhout ◽  
...  
Keyword(s):  
Time Resolved ◽  
Si Substrates ◽  
Time Resolved Photoluminescence

scholarly journals Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

Nano Letters ◽  
2011 ◽  
Vol 11 (9) ◽  
pp. 3827-3832 ◽  
Author(s):  
Emanuele Uccelli ◽  
Jordi Arbiol ◽  
Cesar Magen ◽  
Peter Krogstrup ◽  
Eleonora Russo-Averchi ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Si Substrates ◽  
Gaas Nanowires

Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures

1989 ◽  
Vol 160 ◽  
Author(s):  
J.P. Bergman ◽  
Q.X. Zhao ◽  
P.-O. Holtz ◽  
B. Monemar ◽  
M. Sundaram ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Three Dimensional ◽  
Gaas Layer ◽  
Excitation Intensity ◽  
Spectral Shape ◽  
Spectral Position ◽  
Experimental Conditions ◽  
Time Resolved ◽  
Decay Times ◽  
Time Resolved Photoluminescence

AbstractThe radiative recombination of two-dimensional (2D) carriers in an n-channel GaAs/AIGaAs heterojunction has been studied with time resolved photoluminescence (PL). Two bands related to the recombination of 2D carriers, the so called H-band 1 (HB1) and H-band 2 (HB2), are observed in PL. The spectral shape and position is strongly dependent on the sample and the experimental conditions. The H-bands are e.g. found to shift within a large energy range with the excitation intensity. We report here on the dependence of the decay times of the H-bands on their spectral position. The results are consistent with a recombination process involving 2D electrons, confined in the interface notch, and three-dimensional (3D) holes either from the valence band (HB1) or from neutral acceptors (HB2) in the active GaAs layer. The decay times of HB1 are found to vary in the range of 2-100 ns, while the corresponding decay times of HB2 are in the range of 100 ns - 10 µs.

Time Resolved Studies of Proton Irradiated Quantum Dots

2002 ◽  
Vol 722 ◽  
Author(s):  
Saulius Marcinkevičius ◽  
Rosa Leon ◽  
Charlene Lobo ◽  
Brian Magness ◽  
William Taylor
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Proton Irradiation ◽  
Three Dimensional ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Dot Density ◽  
Gaas Quantum Dot ◽  
Time Resolved Photoluminescence

AbstractThe effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots. Results were compared to irradiation effects on carrier dynamics in thin InGaAs quantum wells. We find that carrier lifetimes in QDs are much less affected by proton irradiation than in quantum wells, which can be attributed to the three-dimensional carrier confinement in quantum dots.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

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