scholarly journals Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

Nano Letters ◽  
2011 ◽  
Vol 11 (9) ◽  
pp. 3827-3832 ◽  
Author(s):  
Emanuele Uccelli ◽  
Jordi Arbiol ◽  
Cesar Magen ◽  
Peter Krogstrup ◽  
Eleonora Russo-Averchi ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Si Substrates ◽  
Gaas Nanowires

scholarly journals Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

Nanoscale ◽  
2018 ◽  
Vol 10 (16) ◽  
pp. 7792-7802 ◽  
Author(s):  
Dingkun Ren ◽  
Adam C. Scofield ◽  
Alan C. Farrell ◽  
Zixuan Rong ◽  
Michael A. Haddad ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Transient Model ◽  
Time Resolved ◽  
Si Substrates ◽  
Gaas Nanowires ◽  
Time Resolved Photoluminescence ◽  
Simulated Time

Simulated time-resolved photoluminescence curves and temporal carrier distributions for GaAs nanowires on Si substrates.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

scholarly journals Conformal Coating by Liquid Route on Three-Dimensional Topology

2018 ◽  
Author(s):  
Poirot Nathalie ◽  
Raynal Pierre-Ivan
Keyword(s):  
Spin Coating ◽  
Three Dimensional ◽  
Precursor Solution ◽  
Solution Viscosity ◽  
Chemical Solution ◽  
New Approach ◽  
Conformal Coating ◽  
Si Substrates ◽  
Aspect Ratios ◽  
Post Annealing

We demonstrated a new approach to the production of three-dimensional-coated patterns using liquid route. Metallic perovskite oxides were coated onto three-dimensional (3D) microstructured substrates with different aspect ratios. The success of the method relies on the solution viscosity monitored by adding viscous liquid. The process of oxide thin films consists in three steps: preparing the precursor solution, coating the solution by spin-coating process onto three-dimensional-Si substrates and post-annealing. The chemical solution 3D-coating is conformal.

scholarly journals Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth

2019 ◽  
Vol 5 (7) ◽  
pp. eaaw3180 ◽  
Author(s):  
Gangtae Jin ◽  
Chang-Soo Lee ◽  
Xing Liao ◽  
Juho Kim ◽  
Zhen Wang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Semiconductor Films ◽  
Scale Growth ◽  
Wafer Scale ◽  
Equilibrium Limit ◽  
Si Substrates ◽  
3D Texture

We report wafer-scale growth of atomically thin, three-dimensional (3D) van der Waals (vdW) semiconductor membranes. By controlling the growth kinetics in the near-equilibrium limit during metal-organic chemical vapor depositions of MoS2 and WS2 monolayer (ML) crystals, we have achieved conformal ML coverage on diverse 3D texture substrates, such as periodic arrays of nanoscale needles and trenches on quartz and SiO2/Si substrates. The ML semiconductor properties, such as channel resistivity and photoluminescence, are verified to be seamlessly uniform over the 3D textures and are scalable to wafer scale. In addition, we demonstrated that these 3D films can be easily delaminated from the growth substrates to form suspended 3D semiconductor membranes. Our work suggests that vdW ML semiconductor films can be useful platforms for patchable membrane electronics with atomic precision, yet large areas, on arbitrary substrates.

Algorithms for the calculation of X-ray diffraction patterns from finite element data

2010 ◽  
Vol 43 (6) ◽  
pp. 1287-1299 ◽  
Author(s):  
E. Wintersberger ◽  
D. Kriegner ◽  
N. Hrauda ◽  
J. Stangl ◽  
G. Bauer
Keyword(s):  
Finite Element ◽  
Three Dimensional ◽  
Point Of View ◽  
X Ray Diffraction ◽  
Displacement Fields ◽  
X Ray ◽  
Si Substrates ◽  
Diffraction Patterns ◽  
Simulation Point ◽  
Ccd Detectors

A set of algorithms is presented for the calculation of X-ray diffraction patterns from strained nanostructures. Their development was triggered by novel developments in the recording of scattered intensity distributions as well as in simulation practice. The increasing use of two-dimensional CCD detectors in X-ray diffraction experiments, with which three-dimensional reciprocal-space maps can be recorded in a reasonably short time, requires efficient simulation programs to compute one-, two- and three-dimensional intensity distributions. From the simulation point of view, the finite element method (FEM) has become the standard tool for calculation of the strain and displacement fields in nanostructures. Therefore, X-ray diffraction simulation programs must be able to handle FEM data properly. The algorithms presented here make use of the deformation fields calculated on a mesh, which are directly imported into the calculation of diffraction patterns. To demonstrate the application of the developed algorithms, they were applied to several examples such as diffraction data from a dislocated quantum dot, from a periodic array of dislocations in a PbSe epilayer grown on a PbTe pseudosubstrate, and from ripple structures at the surface of SiGe layers deposited on miscut Si substrates.

scholarly journals Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

Nanoscale ◽  
2012 ◽  
Vol 4 (5) ◽  
pp. 1486 ◽  
Author(s):  
Eleonora Russo-Averchi ◽  
Martin Heiss ◽  
Lionel Michelet ◽  
Peter Krogstrup ◽  
Jesper Nygard ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Gaas Nanowires

Epitaxy of Graphene on Si substrates toward Three-Dimensional Graphene Devices

2009 ◽  
Author(s):  
H. Fukidome ◽  
Y. Miyamoto ◽  
H. Handa ◽  
R. Takahashi ◽  
K. Imaizumi ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Si Substrates ◽  
Graphene Devices

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5303-5310 ◽  
Author(s):  
Pierre Corfdir ◽  
Barbara Van Hattem ◽  
Emanuele Uccelli ◽  
Sònia Conesa-Boj ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Three Dimensional ◽  
Crystal Phase ◽  
Gaas Nanowires ◽  
Quantum Disks

Novel growth and properties of GaAs nanowires on Si substrates

2009 ◽  
Vol 21 (3) ◽  
pp. 035604 ◽  
Author(s):  
J H Kang ◽  
Q Gao ◽  
H J Joyce ◽  
H H Tan ◽  
C Jagadish ◽  
...  
Keyword(s):  
Si Substrates ◽  
Gaas Nanowires
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