Self-powered photogalvanic phosphorene photodetectors with high polarization sensitivity and suppressed dark current

Nanoscale ◽  
2018 ◽  
Vol 10 (16) ◽  
pp. 7694-7701 ◽  
Author(s):  
Shuaishuai Li ◽  
Tao Wang ◽  
Xiaoshuang Chen ◽  
Wei Lu ◽  
Yiqun Xie ◽  
...  
Keyword(s):  
Dark Current ◽  
Polarization Sensitivity ◽  
High Polarization ◽  
Self Powered

Self-powered phosphorene-based photodetectors driven by photogalvanic effects are proposed theoretically.

A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity

2019 ◽  
Vol 7 (13) ◽  
pp. 3817-3821 ◽  
Author(s):  
Cheng Jia ◽  
Di Wu ◽  
Enping Wu ◽  
Jiawen Guo ◽  
Zhihui Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Fast Response ◽  
Polarization Sensitivity ◽  
High Responsivity ◽  
High Polarization ◽  
Specific Detectivity ◽  
Self Powered

A high-performance self-powered photodetector based on a MoS2/GaAs heterojunction was demonstrated, which demonstrated a high responsivity, specific detectivity, fast response speeds, as well as high polarization sensitivity.

The large photoresponse and high polarization sensitivity of Te-based optoelectronic devices with the adsorbed hydroxide ions

2021 ◽  
Vol 118 (22) ◽  
pp. 221109
Author(s):  
Le-Le Gong ◽  
Wen Xiong ◽  
Yi-Qun Xie ◽  
Jie Hu ◽  
Pu Huang ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Polarization Sensitivity ◽  
High Polarization

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

scholarly journals Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing

2020 ◽  
Vol 8 (7) ◽  
pp. 3632-3642 ◽  
Author(s):  
Di Wu ◽  
Cheng Jia ◽  
Fenghua Shi ◽  
Longhui Zeng ◽  
Pei Lin ◽  
...  
Keyword(s):  
Infrared Imaging ◽  
Polarization Sensitivity ◽  
Mid Infrared ◽  
Humidity Sensing ◽  
Imaging Capability ◽  
High Polarization ◽  
Photovoltaic Detectors ◽  
Broadband Spectrum

A self-driven and broadband photodetector based on PdSe2/SiNWA mixed-dimensional vdW heterojunction is fabricated, which shows a broadband spectrum from 200 nm to 4.6 μm with a high polarization sensitivity and good mid-infrared imaging capability.

Wavelength and polarization selective multi-band tunnelling quantum dot detectors

2007 ◽  
Vol 15 (4) ◽  
Author(s):  
A. Perera ◽  
G. Ariyawansa ◽  
V. Apalkov ◽  
S. Matsik ◽  
X. Su ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Molecular Beam ◽  
Far Infrared ◽  
Polarization Sensitivity ◽  
Double Barrier ◽  
Terahertz Detectors ◽  
Resonant Tunnelling ◽  
High Temperature Operation ◽  
Multi Band

AbstractThe reduction of the dark current without reducing the photocurrent is a considerable challenge in developing far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low dark current, a QD-based structure is an appropriate choice for terahertz detectors. The work reported here discusses multi-band tunnelling quantum dot infrared photo detector (T-QDIP) structures designed for high temperature operation covering the range from mid-to far-infrared. These structures grown by molecular beam epitaxy consist of a QD (InGaAs or InAlAs) placed in a well (GaAs/AlGaAs) with a double-barrier system (AlGaAs/InGaAs/AlGaAs) adjacent to it. The photocurrent, which can be selectively collected by resonant tunnelling, is generated by a transition of carriers from the ground state in the QD to a state in the well coupled with a state in the double-barrier system. The double-barrier system blocks the majority of carriers contributing to the dark current. Several important properties of T-QDIP detectors such as the multi-colour (multi-band) nature of the photoresponse, the selectivity of the operating wavelength by the applied bias, and the polarization sensitivity of the response peaks, are also discussed.

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