Understanding charge transfer and recombination by interface engineering for improving the efficiency of PbS quantum dot solar cells

2018 ◽  
Vol 3 (4) ◽  
pp. 417-429 ◽  
Author(s):  
Chao Ding ◽  
Yaohong Zhang ◽  
Feng Liu ◽  
Yukiko Kitabatake ◽  
Shuzi Hayase ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Electron Acceptor ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Interface Engineering ◽  
Charge Collection Efficiency ◽  
Quantum Dot Solar Cells ◽  
Doped Zno ◽  
Pbs Quantum Dot ◽  
Mg Doped

In Mg-doped ZnO/PbS QDHSCs, a spike structure is formed between the QDs and the “electron acceptor”, which improved charge collection efficiency.

Mg-doped ZnO layer to enhance electron transporting for PbS quantum dot solar cells

2021 ◽  
Vol 21 ◽  
pp. 14-19
Author(s):  
Meibo Xing ◽  
Yuyao Wei ◽  
Dandan Wang ◽  
Qing Shen ◽  
Ruixiang Wang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Doped Zno ◽  
Pbs Quantum Dot ◽  
Mg Doped

scholarly journals Efficient PbS Quantum Dot Solar Cells with Both Mg-Doped ZnO Window Layer and ZnO Nanocrystal Interface Passivation Layer

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 219
Author(s):  
Hao Ren ◽  
Ao Xu ◽  
Yiyang Pan ◽  
Donghuan Qin ◽  
Lintao Hou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Thin Layer ◽  
Window Layer ◽  
Ambient Conditions ◽  
Quantum Dot Solar Cells ◽  
Doped Zno ◽  
Interface Passivation ◽  
Pbs Quantum Dot ◽  
Mg Doped

In this paper, a Mg-doped ZnO (MZO) thin film is prepared by a simple solution process under ambient conditions and is used as the window layer for PbS solar cells due to a wide n-type bandgap. Moreover, a thin layer of ZnO nanocrystals (NCs) was deposited on the MZO to reduce carrier recombination at the interface for inverted PbS quantum dot solar cells with the configuration Indium Tin Oxides (ITO)/MZO/ZnO NC (w/o)/PbS/Au. The effect of film thickness and annealing temperature of MZO and ZnO NC on the performance of PbS quantum dot solar cells was investigated in detail. It was found that without the ZnO NC thin layer, the highest power conversion efficiency(PCE) of 5.52% was obtained in the case of a device with an MZO thickness of 50 nm. When a thin layer of ZnO NC was introduced between MZO and PbS quantum dot film, the PCE of the champion device was greatly improved to 7.06% due to the decreased interface recombination. The usage of the MZO buffer layer along with the ZnO NC interface passivation technique is expected to further improve the performance of quantum dot solar cells.

scholarly journals Suggesting a Reliable Method of Calculating Charge Collection Efficiency in Charge-transfer Measurement for Brush Discharges

2019 ◽  
Author(s):  
Nirmalya Basu
Keyword(s):  
Mathematical Model ◽  
Charge Transfer ◽  
Reliable Method ◽  
Collection Efficiency ◽  
Fast Response ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Transfer Measurement ◽  
Induced Charge ◽  
The Mathematical Model

Induced charge errors lead to underestimation of transferred charge in brush discharges when the measurement is done using fast-response unshielded probes. The discrepancy observed between the values of charge-collection efficiency for different charge-transfer thresholds obtained theoretically by Walmsley [2] and those obtained experimentally by Chowdhury et al [3] necessitates figuring out ways to improve the mathematical model used by Walmsley. A close perusal of the said work by Walmsley [2] has pointed out an error therein– in the use of the equation reff = KD. I propose here a way to get rid of this error, and in doing so, I propose a method of calculating the charge-collection efficiency in charge-transfer measurement for brush discharges more reliable than that used by Walmsley [2].

Titanium oxide morphology controls charge collection efficiency in quantum dot solar cells

2017 ◽  
Vol 19 (6) ◽  
pp. 4607-4617 ◽  
Author(s):  
Ankita Kolay ◽  
P. Naresh Kumar ◽  
Sarode Krishna Kumar ◽  
Melepurath Deepa
Keyword(s):  
Quantum Dot ◽  
Collection Efficiency ◽  
Current Collector ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Interface Charge ◽  
Quantum Dot Solar Cells ◽  
Back Electron Transfer

Charge transfer at the TiO2/quantum dot (QD) interface, charge collection at the TiO2/QD/current collector (FTO or SnO2:F) interface, and back electron transfer at the TiO2/QDs/S2− interface are processes controlled by the electron transport layer or TiO2.

Nanowire-quantum-dot solar cells and the influence of nanowire length on the charge collection efficiency

2009 ◽  
Vol 95 (19) ◽  
pp. 193103 ◽  
Author(s):  
Kurtis S. Leschkies ◽  
Alan G. Jacobs ◽  
David J. Norris ◽  
Eray S. Aydil
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Quantum Dot Solar Cells

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor
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