Achieving a direct band gap and high power conversion efficiency in an SbI3/BiI3 type-II vdW heterostructure via interlayer compression and electric field application

2019 ◽  
Vol 21 (5) ◽  
pp. 2619-2627 ◽  
Author(s):  
Kang Lai ◽  
Hongxing Li ◽  
Yuan-Kai Xu ◽  
Wei-Bing Zhang ◽  
Jiayu Dai
Keyword(s):  
Electric Field ◽  
Power Conversion ◽  
Field Application ◽  
Type Ii ◽  
High Power Conversion Efficiency ◽  
Photovoltaic Properties ◽  
Direct Band Gap ◽  
Vertical Electric Field ◽  
Direct Band ◽  
Vdw Heterostructure

Interlayer compression and vertical electric field application improve the electronic and photovoltaic properties of type-II vdW heterostructures with an indirect gap.

scholarly journals Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Gang Xu ◽  
Hao Lei
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type I ◽  
First Principle ◽  
Type Ii ◽  
Direct Band Gap ◽  
Direct Band ◽  
Vdw Heterostructure

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.

scholarly journals A type-II blue phosphorus/MoSe2 van der Waals heterostructure: improved electronic and optical properties via vertical electric field

2020 ◽  
Vol 1 (6) ◽  
pp. 1849-1857
Author(s):  
Huabing Shu
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Type Ii ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Effective Separation ◽  
Van Der Waals Heterostructure ◽  
Vertical Electric Field ◽  
Vdw Heterostructure

Electric-field-driving effective separation of photoexcited electron–hole pairs in the P2/MoSe2 vdW heterostructure.

Electric field and uniaxial strain tunable electronic properties of the InSb/InSe heterostructure

2020 ◽  
Vol 22 (36) ◽  
pp. 20712-20720
Author(s):  
Zhu Wang ◽  
Fangwen Sun ◽  
Jian Liu ◽  
Ye Tian ◽  
Zhihui Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
Uniaxial Strain ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Band Gap ◽  
Direct Band

The InSb/InSe heterostructure with tunable electronic properties has a direct band gap and an intrinsic type-II band alignment.

scholarly journals Theoretical Prediction of the Structural and Electronic Properties of a Single Layer Graphene-like Two-dimensional Janus GaInSTe

2021 ◽  
Vol 37 (2) ◽  
Author(s):  
Nguyen Van Chuong ◽  
Nguyen Ngoc Hieu ◽  
Nguyen Van Hieu
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Structural And Electronic Properties ◽  
Direct Band ◽  
New Type

This paper constructs a new type of two-dimensional graphene-like Janus GaInSTe monolayer and systematically investigates its structural and electronic properties as well as the effect of external electric field using first-principles calculations. In the ground state, Janus GaInSTe monolayer is dynamically stable with no imaginary frequencies in its phonon spectrum and possesses a direct band gap semiconductor. The band gap of Janus GaInSTe monolayer can be tuned by applying an electric field, which leads the different transitions from semiconductor to metal, and from indirect to direct band gap. These findings show a great potential application of Janus GaInSTe material for designing next-generation devices.

A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

2019 ◽  
Vol 7 (18) ◽  
pp. 11265-11271 ◽  
Author(s):  
Yuliang Mao ◽  
Congsheng Xu ◽  
Jianmei Yuan ◽  
Hongquan Zhao
Keyword(s):  
First Principles ◽  
High Performance ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Photoelectric Conversion Efficiency ◽  
Type Ii ◽  
First Principles Calculations ◽  
Photoelectric Conversion ◽  
Direct Band Gap ◽  
Direct Band

Based on first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has a type-II band alignment and a direct band gap. The predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%.

scholarly journals Possible electric field induced indirect to direct band gap transition in MoSe2

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
B. S. Kim ◽  
W. S. Kyung ◽  
J. J. Seo ◽  
J. Y. Kwon ◽  
J. D. Denlinger ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Advancements in all-solid-state hybrid solar cells based on organometal halide perovskites

2015 ◽  
Vol 2 (4) ◽  
pp. 378-405 ◽  
Author(s):  
Shaowei Shi ◽  
Yongfang Li ◽  
Xiaoyu Li ◽  
Haiqiao Wang
Keyword(s):  
Diffusion Length ◽  
Power Conversion ◽  
Hybrid Solar Cells ◽  
Research Attention ◽  
Direct Band Gap ◽  
The Past ◽  
Considerable Research ◽  
Direct Band ◽  
Halide Perovskites ◽  
Photovoltaic Technologies

Over the past several years, organic–inorganic hybrid perovskites have gained considerable research attention due to their direct band gap, large absorption coefficient, ambipolar diffusion and long carrier diffusion length, and have revolutionized the prospects of emerging photovoltaic technologies, with the highest power conversion efficiency of over 19% achieved under laboratory conditions.

Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells

RSC Advances ◽  
2015 ◽  
Vol 5 (114) ◽  
pp. 93765-93772 ◽  
Author(s):  
Yandong Duan ◽  
Jiaxin Zheng ◽  
Nianqing Fu ◽  
Jiangtao Hu ◽  
Tongchao Liu ◽  
...  
Keyword(s):  
High Power ◽  
Power Conversion ◽  
Dye Sensitized Solar Cells ◽  
Hollow Structure ◽  
High Power Conversion Efficiency ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Doping Technique ◽  
Sensitized Solar Cells ◽  
Ga Doping

By introducing the rough hollow microspheres structure and Ga-doping technique, a high power conversion efficiency (η) up to 7.11% is obtained for SnO2 based DSSCs.

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