A mobile precursor determines protein resistance on nanostructured surfaces

2018 ◽  
Vol 20 (18) ◽  
pp. 12527-12534 ◽  
Author(s):  
Kang Wang ◽  
Ye Chen ◽  
Xiangjun Gong ◽  
Jianlong Xia ◽  
Junpeng Zhao ◽  
...  

A 2D-mobile protein in a precursor state is a prerequisite to protein resistance on nanostructured surfaces.

Author(s):  
Андрей Дмитриевич Бухтеев ◽  
Виктория Буянтуевна Бальжиева ◽  
Анна Романовна Тарасова ◽  
Фидан Гасанова ◽  
Светлана Викторовна Агасиева

В данной статье рассматривается применение и технологии получения наноструктурированных поверхностей. Рассмотрены такие методы как компактирование порошков (изостатическое прессование, метод Гляйтера), интенсивная пластическая деформация (угловое кручение, равноканальное угловое прессование, обработка давлением многослойных композитов) и модификация поверхности (лазерная обработка, ионная бомбардировка). This article discusses the application and technology for obtaining nano-structured surfaces. Methods such as compaction of powders (isostatic pressing, Gleiter method), severe plastic deformation (angular torsion, equal-channel angular pressing, pressure treatment of multilayer composites) and surface modification (laser treatment, ion bombardment) are considered.


Author(s):  
Seungtae Oh ◽  
Jooyoung Lee ◽  
Donghyun Seo ◽  
Myung Chul Shin ◽  
Jin Ki Lee ◽  
...  

Author(s):  
Nithin Vinod Upot ◽  
Allison Mahvi ◽  
Kazi Fazle Rabbi ◽  
Jiaqi Li ◽  
Anthony M. Jacobi ◽  
...  

2021 ◽  
Vol 2 (2) ◽  
pp. 021401
Author(s):  
Giuseppe M. Paternò ◽  
Aaron M. Ross ◽  
Silvia M. Pietralunga ◽  
Simone Normani ◽  
Nicholas Dalla Vedova ◽  
...  

1999 ◽  
Vol 567 ◽  
Author(s):  
H.-J. Müssig ◽  
J. Dabrowski ◽  
S. Hinrich

ABSTRACTWe report the first direct observation of dissociative chemisorption of oxygen molecules on a silicon surface at room temperature via a molecular precursor state. We link this to the fact that smooth oxide layers can be grown easily on Si(113). The process of initial oxidation is discussed in terms of surface diffusion paths and surface stress. First ab initiocalculations help elucidate the favored adsorption sites and the oxidation mechanism. Experimental evidence was found for bond geometries resulting in the quasi-epitaxial growth of a chemisorption layer on the substrate at elevated temperatures (600°C). In contrast to the first stages of Si(001) oxidation, neither defects nor the ejection of Si atoms plays a significant role during the initial oxidation of Si(113).


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