Pyrene-affixed triazoles: a new class of molecular semiconductors for robust, non-volatile resistive memory devices

2019 ◽  
Vol 55 (32) ◽  
pp. 4643-4646 ◽  
Author(s):  
Biswajit K. Barman ◽  
Murali M. Guru ◽  
Gaurav K. Panda ◽  
Biplab Maji ◽  
Ratheesh K. Vijayaraghavan
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
New Class ◽  
Molecular Semiconductor ◽  
Molecular Semiconductors

Bistable resistive switching in devices with molecular semiconductor with pyrene appended triazole as active stratum.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

2008 ◽  
Vol 47 (4) ◽  
pp. 2701-2703 ◽  
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
Chen Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

2015 ◽  
Vol 17 (19) ◽  
pp. 12849-12856 ◽  
Author(s):  
Shuang Gao ◽  
Fei Zeng ◽  
Minjuan Wang ◽  
Guangyue Wang ◽  
Cheng Song ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Binary Oxide ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Behavior ◽  
System P ◽  
Active Metal

The nonpolar resistive switching behavior of the Pt/Ta2O5/Pt structure can be transformed into the bipolar and complementary ones by inserting 2 and 4 nm Ta nanolayers, respectively.

scholarly journals Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

2014 ◽  
Vol 104 (9) ◽  
pp. 093507 ◽  
Author(s):  
L. Zhong ◽  
L. Jiang ◽  
R. Huang ◽  
C. H. de Groot
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

2013 ◽  
Vol 34 (2) ◽  
pp. 235-237 ◽  
Author(s):  
Xinjun Liu ◽  
Sharif Md. Sadaf ◽  
Sangsu Park ◽  
Seonghyun Kim ◽  
Euijun Cha ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Niobium Oxide ◽  
Memory Devices ◽  
Resistive Memory

Erratum: “Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices”

2017 ◽  
Vol 56 (10) ◽  
pp. 109201
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Hao Tang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-Based Transparent Resistive Memory Devices

2017 ◽  
Vol 77 (4) ◽  
pp. 155-160 ◽  
Author(s):  
Firman Mangasa Simanjuntak ◽  
Bhaskar Pattanayak ◽  
Chun-Chieh Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Hydrogen Peroxide ◽  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex

2017 ◽  
Vol 53 (87) ◽  
pp. 11925-11928 ◽  
Author(s):  
Jian-Hong Tang ◽  
Tian-Ge Sun ◽  
Jiang-Yang Shao ◽  
Zhong-Liang Gong ◽  
Yu-Wu Zhong
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Complex Display

The sandwiched devices of a cobalt(ii) bis-terpyridine complex display appealing flash-type resistive switching (ON/OFF >103; voltage <±3 V).

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