Deriving highly oriented organic nanofibers and ternary memory performance via salification-induced effects

2018 ◽  
Vol 54 (75) ◽  
pp. 10610-10613 ◽  
Author(s):  
Cheng Zhang ◽  
Yang Li ◽  
Yan Zhou ◽  
Qijian Zhang ◽  
Hua Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Pyridinium Salt ◽  
Salt Form ◽  
High Quality ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Conjugated Molecule

A novel pyridine-based organic conjugated molecule (NCPy) has been successfully synthesized and converted into an organic pyridinium salt (NCPy-salt). Highly oriented organic nanofibers and high-quality films were obtained by transforming the molecule to a salt form. This transformation also resulted in a unique ternary resistive switching memory behavior.

Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DD17 ◽  
Author(s):  
Debanjan Jana ◽  
Siddheswar Maikap ◽  
Ta Chang Tien ◽  
Heng Yuan Lee ◽  
Wei-Su Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

2020 ◽  
Vol 12 (46) ◽  
pp. 51837-51845
Author(s):  
Bing Sun ◽  
Xinle Li ◽  
Tiantian Feng ◽  
Songliang Cai ◽  
Teresa Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Two Dimensional ◽  
Resistive Switching Memory ◽  
Covalent Organic Framework ◽  
Switching Memory ◽  
Organic Framework

scholarly journals Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

2020 ◽  
Vol 21 (1) ◽  
pp. 195-204 ◽  
Author(s):  
Takafumi Ishibe ◽  
Yoshiki Maeda ◽  
Tsukasa Terada ◽  
Nobuyasu Naruse ◽  
Yutaka Mera ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Resistive Switching Memory ◽  
Switching Memory

Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrO$_{x}$/GdO$_{x}$/WO$_{x}$/W Structure

2012 ◽  
Vol 51 ◽  
pp. 04DD17 ◽  
Author(s):  
Debanjan Jana ◽  
Siddheswar Maikap ◽  
Ta Chang Tien ◽  
Heng Yuan Lee ◽  
Wei-Su Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Resistive Switching Memory ◽  
Switching Memory

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

2012 ◽  
Vol 111 (6) ◽  
pp. 063710 ◽  
Author(s):  
S. Z. Rahaman ◽  
S. Maikap ◽  
W. S. Chen ◽  
H. Y. Lee ◽  
F. T. Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Resistive Switching Memory ◽  
Switching Memory

Organic and hybrid resistive switching materials and devices

2019 ◽  
Vol 48 (6) ◽  
pp. 1531-1565 ◽  
Author(s):  
Shuang Gao ◽  
Xiaohui Yi ◽  
Jie Shang ◽  
Gang Liu ◽  
Run-Wei Li
Keyword(s):  
Hybrid Materials ◽  
Resistive Switching ◽  
Electronic Property ◽  
Memory Performance ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.

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