Organic and hybrid resistive switching materials and devices

2019 ◽  
Vol 48 (6) ◽  
pp. 1531-1565 ◽  
Author(s):  
Shuang Gao ◽  
Xiaohui Yi ◽  
Jie Shang ◽  
Gang Liu ◽  
Run-Wei Li
Keyword(s):  
Hybrid Materials ◽  
Resistive Switching ◽  
Electronic Property ◽  
Memory Performance ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.

Hydrothermal synthesis of nanoporous lead selenide thin films: photoelectrochemical and resistive switching memory applications

2019 ◽  
Vol 30 (19) ◽  
pp. 17725-17734 ◽  
Author(s):  
Tejasvinee S. Bhat ◽  
Archana S. Kalekar ◽  
Dhanaji S. Dalavi ◽  
Chetan C. Revadekar ◽  
Atul C. Khot ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrothermal Synthesis ◽  
Resistive Switching ◽  
Lead Selenide ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DD17 ◽  
Author(s):  
Debanjan Jana ◽  
Siddheswar Maikap ◽  
Ta Chang Tien ◽  
Heng Yuan Lee ◽  
Wei-Su Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Resistive Switching Memory ◽  
Switching Memory

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
Marcel Reiners ◽  
Rainer Waser ◽  
Susanne Hoffmann-Eifert
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Memory Applications ◽  
Switching Memory

Ab initio study of ceria films for resistive switching memory applications

2017 ◽  
Vol 4 (10) ◽  
pp. 106301 ◽  
Author(s):  
Mehreen Firdos ◽  
Fayyaz Hussain ◽  
Muhammad Imran ◽  
Muhammad Ismail ◽  
A M Rana ◽  
...  
Keyword(s):  
Ab Initio ◽  
Resistive Switching ◽  
Ab Initio Study ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory
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