Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors

2010 ◽  
Vol 2 (3) ◽  
pp. 611-615 ◽  
Author(s):  
Youngmin Jeong ◽  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Keunkyu Song ◽  
Kyoohee Woo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Bias Stress

Towards environmentally stable solution-processed oxide thin-film transistors: a rare-metal-free oxide-based semiconductor/insulator heterostructure and chemically stable multi-stacking

2017 ◽  
Vol 5 (40) ◽  
pp. 10498-10508 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Kyung Su Kim ◽  
Sung Hyun Jung ◽  
Hyung Koun Cho
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Stable Solution ◽  
Rare Metal ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Practical Solution ◽  
Metal Free ◽  
Oxide Tfts

ZTO/Al2O3 heterostructure and chemically stable sol–gel multi-stacking method are proposed for practical solution-processed oxide TFTs.

Bias Stress Stability of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2009 ◽  
Vol 156 (11) ◽  
pp. H808 ◽  
Author(s):  
Youngmin Jeong ◽  
Keunkyu Song ◽  
Dongjo Kim ◽  
Chang Young Koo ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Bias Stress ◽  
Stability Of Solution ◽  
Zinc Tin Oxide

Environmentally Stable, Solution-Processed Indium Boron Zinc Oxide Thin-Film Transistors

2020 ◽  
Vol 49 (9) ◽  
pp. 5606-5612 ◽  
Author(s):  
S. Arulkumar ◽  
S. Parthiban ◽  
G. Dharmalingam ◽  
Bindu Salim ◽  
J. Y. Kwon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

Sublimation-doping with super bases for high-performance solution-processed heterojunction oxide thin film transistors

2021 ◽  
Author(s):  
Juhyeok Lee ◽  
Mingyu Jae ◽  
Syed Zahid Hassan ◽  
Dae Sung Chung
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
High Electron ◽  
Solution Processed ◽  
High Electron Mobility ◽  
Bias Stress ◽  
High Level

Various amidine base with different pKa values are deposited via sublimation, resulting in not only an exceptionally high electron mobility of 37.8 cm2 V−1 s−1 on average (46.6 cm2 V−1 s−1 maximum) but also a high level of bias-stress stability.

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film
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