Spin filtering of a termination-controlled LSMO/Alq3 heterojunction for an organic spin valve

2017 ◽  
Vol 5 (35) ◽  
pp. 9128-9137 ◽  
Author(s):  
Tu-Ngoc Lam ◽  
Yen-Lin Huang ◽  
Ke-Chuan Weng ◽  
Yu-Ling Lai ◽  
Ming-Wei Lin ◽  
...  
Keyword(s):  
Spin Injection ◽  
Spin Valve ◽  
Spin Valves ◽  
Organic Hybrid ◽  
Spin Filtering

La1−xSrxMnO3 (LSMO) is well known as an efficient spin-injection electrode in ferromagnetic–organic hybrid-based organic spin valves (OSV).

scholarly journals COMPARATIVE STUDY OF SPIN INJECTION AND TRANSPORT IN Alq3 AND Co–PHTHALOCYANINE-BASED ORGANIC SPIN VALVES

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440009 ◽  
Author(s):  
SAYANI MAJUMDAR ◽  
SUKUMAR DEY ◽  
HANNU HUHTINEN ◽  
JOHNNY DAHL ◽  
MARJUKKA TUOMINEN ◽  
...  
Keyword(s):  
Single Molecule ◽  
Giant Magnetoresistance ◽  
Chemical Reactivity ◽  
Spin Injection ◽  
Spin Valve ◽  
Spin Valves ◽  
Half Metallic ◽  
High Expectations ◽  
Spacer Layer ◽  
Spin Polarized

Recent experimental reports suggest the formation of a highly spin-polarized interface ("spinterface") between a ferromagnetic (FM) Cobalt ( Co ) electrode and a metal-phthalocyanine (Pc) molecule. Another report shows an almost 60% giant magnetoresistance (GMR) response measured on Co / H 2 Pc -based single molecule spin valves. In this paper, we compare the spin injection and transport properties of organic spin valves with two different organic spacers, namely Tris(8-hydroxyquinolinato) aluminum ( Alq 3) and CoPc sandwiched between half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) and Co electrodes. Alq 3-based spin valves exhibit clear and reproducible spin valve switching with almost 35% negative GMR at 10 K, in accordance with previous reports. In contrast, cobalt-pthalocyanine ( CoPc )-based spin valves fail to show clear GMR response above noise level despite high expectations based on recent reports. Investigations of electronic, magnetic and magnetotransport properties of electrode/spacer interfaces of LSMO/ CoPc / Co devices offer three plausible explanations for the absence of GMR: (1) CoPc films are strongly chemisorbed on the LSMO surface. This improves the LSMO magnetic properties but also induces local traps at the LSMO interface for spin-polarized charge carriers. (2) At the Co / CoPc interface, diffusion of Co atoms into the organic semiconductor (OS) layer and chemical reactivity between Co and the OS deteriorates the FM properties of Co . This renders the Co / CoPc interface as unsuitable for efficient spin injection. (3) The presence of heavy Co atoms in CoPc leads to large spin–orbit coupling in the spacer. The spin relaxation time in the CoPc layer is therefore considerably smaller compared to Alq 3. Based on these findings, we suggest that the absence of GMR in CoPc -based spin valves is caused by a combined effect of inefficient spin injection from FM contacts and poor spin transport in the CoPc spacer layer.

Enhanced spin accumulation in nano-pillar-based lateral spin valve using spin reservoir effect

2022 ◽  
Author(s):  
Xiaomin Cui ◽  
Shaojie Hu ◽  
Takashi Kimura
Keyword(s):  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Valve ◽  
Spin Current ◽  
Spin Valves ◽  
Pure Spin ◽  
Spin Accumulation ◽  
Spintronic Devices ◽  
High Bias ◽  
Angle Deposition

Abstract Lateral spin valves are ideal nanostructures for investigating spin-transport physics phenomena and promoting the development of future spintronic devices owing to dissipation-less pure spin current. The magnitude of the spin accumulation signal is well understood as a barometer for characterizing spin current devices. Here, we develop a novel fabrication method for lateral spin valves based on ferromagnetic nanopillar structures using a multi-angle deposition technique. We demonstrate that the spin-accumulation signal is effectively enhanced by reducing the lateral dimension of the nonmagnetic spin channel. The obtained results can be quantitatively explained by the confinement of the spin reservoir by considering spin diffusion into the leads. The temperature dependence of the spin accumulation signal and the influence of the thermal spin injection under a high bias current are also discussed.

scholarly journals Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al2O3 spin injection and detection barriers

2015 ◽  
Vol 252 (11) ◽  
pp. 2395-2400 ◽  
Author(s):  
Marc Drögeler ◽  
Frank Volmer ◽  
Maik Wolter ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Spin Injection ◽  
Atomic Layer ◽  
Bilayer Graphene ◽  
Spin Valves ◽  
Bottom Up ◽  
Spin Injection And Detection

Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel

2021 ◽  
Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Injection ◽  
Spin Valve ◽  
Transverse Spin ◽  
Spin Accumulation ◽  
Spin Channel ◽  
Relative Angle ◽  
Channel Layer ◽  
Spin Polarized ◽  
Resistance Model ◽  
Large Spin

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves

2020 ◽  
Vol 22 (44) ◽  
pp. 25730-25739
Author(s):  
Jie Yang ◽  
Ruge Quhe ◽  
Shiqi Liu ◽  
Yuxuan Peng ◽  
Xiaotian Sun ◽  
...  
Keyword(s):  
Spin Valve ◽  
Spin Valves ◽  
Ferromagnetic Electrodes

Here we design a monolayer Fe3GeTe2 spin-valve device by attaching two ends to ferromagnetic electrodes. A high magnetoresistance of ~ 390% is obtained and significantly increased to 450 ~ 510% after the gates are introduced.

High spin injection polarization at an elevated dc bias in tunnel-junction-based lateral spin valves

2009 ◽  
Vol 95 (2) ◽  
pp. 022519 ◽  
Author(s):  
X. J. Wang ◽  
H. Zou ◽  
L. E. Ocola ◽  
Y. Ji
Keyword(s):  
High Spin ◽  
Tunnel Junction ◽  
Spin Injection ◽  
Spin Valves ◽  
Dc Bias

Enhanced spin injection efficiency and extended spin lifetimes in graphene spin valves

2011 ◽  
Author(s):  
Wei Han ◽  
J. R. Chen ◽  
K. M. McCreary ◽  
H. Wen ◽  
R. K. Kawakami
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Injection Efficiency
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