Inkjet printing of oxide thin film transistor arrays with small spacing with polymer-doped metal nitrate aqueous ink

2017 ◽  
Vol 5 (30) ◽  
pp. 7495-7503 ◽  
Author(s):  
Shaojing Wu ◽  
Qing Zhang ◽  
Zheng Chen ◽  
Lixin Mo ◽  
Shuangshuang Shao ◽  
...  
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Metal Nitrate ◽  
Oxide Thin Film ◽  
Small Spacing

Minimizing the spacing of inkjet printed oxide arrays for thin film transistors via combination of polyvinylpyrrolidone (PVP) doping in ink and HMDS treatment of substrates.

Development of 55‐in. 8K AMOLED TV based on coplanar oxide thin‐film transistors and inkjet printing process

2020 ◽  
Vol 28 (5) ◽  
pp. 418-427 ◽  
Author(s):  
Zhongyuan Wu ◽  
Liangchen Yan ◽  
Yongqian Li ◽  
Xuehuan Feng ◽  
Huaiting Shih ◽  
...  
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Printing Process

scholarly journals Preparation of Li-Doped Indium-Zinc Oxide Thin-Film Transistor at Relatively Low Temperature Using Inkjet Printing Technology

2021 ◽  
Vol 59 (5) ◽  
pp. 314-320
Author(s):  
Woon-Seop Choi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Inkjet Printing ◽  
Printed Electronics ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Lithium Doping ◽  
Indium Zinc Oxide ◽  
Oxide Tfts

Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs). Among potential applications, metal oxide TFTs, which have good properties and moderate processing methods, could be prepared using inkjet printing in the display industry. One effective method of improving their electrical properties is via doping. Lithium doping an oxide TFT is a very delicate process, and difficult to get good results. In this study, lithium was added to indium-zinc oxide (IZO) for inkjet printing to make oxide TFTs. Electrical properties, transfer and output curves, were achieved using inkjet printing even at the relatively low annealing temperature of 200 oC. After optimizing the inkjet process parameters, a 0.01 M Li-doped IZO TFT at 400 oC showed a mobility of 9.08 ± 0.7 cm2/V s, a sub-threshold slope of 0.62 V/dec, a threshold voltage of 2.66 V, and an on-to-off current ratio of 2.83 × 108. Improved bias stability and hysteresis behavior of the inkjet-printed IZO TFT were also achieved by lithium doping.

Solution-processed metal oxide arrays using femtosecond laser ablation and annealing for thin-film transistors

2017 ◽  
Vol 5 (36) ◽  
pp. 9273-9280 ◽  
Author(s):  
Cihai Chen ◽  
Gengxu Chen ◽  
Huihuang Yang ◽  
Guocheng Zhang ◽  
Daobin Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Femtosecond Laser ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Femtosecond Laser Ablation ◽  
Oxide Thin Film ◽  
Metal Oxide Layer ◽  
Metal Oxide Thin Film

A femtosecond laser is proposed to pattern and anneal a metal oxide layer for simple fabrication of metal oxide thin-film transistor arrays.

scholarly journals Fully Inkjet-Printed Short-Channel Metal-Oxide Thin-Film Transistors Based on Semitransparent ITO/Au Source/Drain Electrodes

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 942
Author(s):  
Yuzhi Li ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Oxide Thin Film ◽  
Short Channel ◽  
Au Electrode ◽  
Metal Oxide Thin Film ◽  
Lift Off

In this work, short-channel semitransparent indium-tin-oxide (ITO)/Au electrode pairs were fabricated via inkjet printing and lift-off technology. The printed hydrophobic coffee stripes not only define the channel length of ITO/Au electrode pairs, but also help the realization of uniform short-channel In0.95Ga0.05Ox thin-film transistors (TFTs). The patterned semitransparent ITO/Au films, with the assistance of inkjet printing, exhibit an excellent conductivity compared to that of printed ITO films, and the short-channel In0.95Ga0.05Ox TFTs based on the semitransparent ITO/Au source/drain electrodes exhibit a maximum mobility of 2.9 cm2 V−1 s−1. This work proposes a method to prepare patterned high-conductive electrodes for TFTs with the assistance of inkjet printing.

Effect of Electrode Materials on the Electrical Characteristics of Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4325-4329
Author(s):  
Hosang Lee ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrode Materials ◽  
Thin Film Transistor ◽  
Channel Length ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Drain Electrode ◽  
Channel Region ◽  
Effective Channel

In this study, we investigated the effect of electrode materials on the electrical characteristics of coplanar top-gate a-ITGZO thin-film transistors, in which the gate, source, and drain electrodes were made of the same metal, Ti or Al. The field-effect mobilities of the a-ITGZO thin-film transistors with Ti and Al electrodes were 35.2 and 20.1 cm2/V·s, respectively, and the threshold voltage of the a-ITGZO thin-film transistor with Ti electrodes was −0.4 V, whereas that of the transistor with Al electrodes was −1.8; this shift is attributed to the fact that Ti has a higher work function than Al. When Ti was used as the source and drain electrode material, the channel resistance and effective channel length were reduced owing to the penetration of metal atoms into the channel region from the edge of the source/drain electrodes.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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