An efficient and thickness insensitive cathode interface material for high performance inverted perovskite solar cells with 17.27% efficiency

2017 ◽  
Vol 5 (24) ◽  
pp. 5949-5955 ◽  
Author(s):  
Sen Peng ◽  
Jingsheng Miao ◽  
Imran Murtaza ◽  
Liang Zhao ◽  
Zhao Hu ◽  
...  
Keyword(s):  
Energy Level ◽  
Electron Mobility ◽  
High Performance ◽  
Power Conversion ◽  
Control Cell ◽  
Perovskite Solar Cells ◽  
High Electron ◽  
Lumo Energy ◽  
High Electron Mobility ◽  
Water Alcohol

A thickness insensitive water/alcohol soluble small molecular, PN6, exhibits high electron mobility with deep LUMO energy level, and effectively decrease the work function of the cathode. Those properties significantly enhance the power conversion efficiency from 8.73% (control cell) to 17.27%.

scholarly journals Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

2020 ◽  
Vol 829 ◽  
pp. 154542 ◽  
Author(s):  
Bing Ren ◽  
Meiyong Liao ◽  
Masatomo Sumiya ◽  
Jian Li ◽  
Lei Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

VLSI Design ◽  
2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
Mohammad Javad Sharifi ◽  
Davoud Bahrepour
Keyword(s):  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Xor Gate ◽  
High Electron Mobility ◽  
Existing Structures ◽  
Input And Output ◽  
Exclusive Or

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate

2018 ◽  
Vol 762 ◽  
pp. 933-940 ◽  
Author(s):  
Xinglai Zhang ◽  
Yanan Jiang ◽  
Baodan Liu ◽  
Wenjin Yang ◽  
Jing Li ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron ◽  
High Electron Mobility

High Performance CuMetallized GaAs HEMTs Processing and Reliability

1998 ◽  
Vol 535 ◽  
Author(s):  
T. Feng ◽  
A. Dimoulas ◽  
N. Strifas ◽  
A. Christou
Keyword(s):  
Elevated Temperature ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Comparable Performance ◽  
Gate Resistance

AbstractAlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation. The DC measurement of the processed AlGaAs/GaAs HEMTs with Cu/Ti gates shows comparable performance to similar Au based GaAs HEMTs. The Cu-based HEMTs were also subjected to elevated temperature testing under 5% H2 –N2 forming gas up to 250°C and 8 hours and no degradation due to hydrogen effects was found.

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